Allicdata Part #: | MRF19045LSR3-ND |
Manufacturer Part#: |
MRF19045LSR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 1.93GHZ NI-400S |
More Detail: | RF Mosfet LDMOS 26V 550mA 1.93GHz 14.5dB 9.5W NI-4... |
DataSheet: | MRF19045LSR3 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 1.93GHz |
Gain: | 14.5dB |
Voltage - Test: | 26V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 550mA |
Power - Output: | 9.5W |
Voltage - Rated: | 65V |
Package / Case: | NI-400S |
Supplier Device Package: | NI-400S-240 |
Base Part Number: | MRF19045 |
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The MRF19045LSR3 is an N-SNP high power field effect transistor (FET), designed for wideband RF and microwave applications.
The device utilises state-of-the-art construction techniques, including advanced Silicon-on-Insulator (SOI) process technology, to achieve exceptional performance. This high-performance FET is available in a low-profile surface-mount package and requires minimal board area.
The MRF19045LSR3 has several unique features that make it ideal for use in a variety of high power applications, including: wideband operation, high gain and power output, and excellent impedance matching. The device is well-suited for use in RF power amplifiers, transmitters and receivers, as well as other RF applications where high-power and wide bandwidth are required.
The device is a low gate capacitance, high-power Field Effect Transistor that is internally matched for 50 Ohm impedance. The output power is capable of up to 90 Watts for CW operation, and 60 Watts for intermittent operation. It has a high gain of 12 dB across a wide frequency range between 800MHz - 2000MHz.
The working principle of the MRF19045LSR3 is based on the physics of its active channel, which is created by the interplay of holes and electrons. The N-channel FET is operated by a small external input voltage, which causes a change in the concentration of electrons in the channel and alters the current conduction characteristics. As a result, the FET acts as an amplifier, varying the current conduction between two source and drain terminals as the input voltage is changed.
The MRF19045LSR3 is an excellent choice for designers looking for increased performance and exceptional power levels in a compact package. The advanced technology of the device enables it to operate at higher temperature, power and frequency ranges than conventional FETs, making it ideal for high power RF applications.
The specific data is subject to PDF, and the above content is for reference
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