MRF6P18190HR5

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The MRF6P18190HR5 is a field effect transistor (FET) used in radio frequency (RF) applications. It is specifically designed for 1.8GHz and higher power amplification devices. The device features improved power gain, intermodulation performance, and high gain stability.

The main application for this FET is for high power radios, such as cell phones, Bluetooth devices, and RF amplifiers. It can also be used for other RF applications, such as local area network (LAN) receivers, low-noise amplifiers (LNAs), and TV and radio broadcast transmitters.

This FET utilizes GaN technology and features a design of 48V-nominal drain bias with maximum rated drain current of 5.5A and a maximum operating voltage of up to 100V. It also offers a maximum power dissipation of up to 40W, with a maximum drain efficiency of over 50%.

The working principle of this FET is based on a type of field effect transistor called a MOSFET, which is the most common type of field effect transistor in integrated circuits. This device operates by using a voltage at the gate field to control the current in the source-drain path. The gate voltage can be used to either increase or decrease the drain current, depending on the specific application. With this FET, the gate-source voltage will determine the drain current flow.

This FET is built with a silicon-gatetype FET (FG FET) consisting of two metal-oxide-semiconductor layers. The first layer is known as the gate layer and it is an n-type semiconductor material, while the second layer is known as the channel layer and is p-type semiconductor material. When a voltage is applied to the gate electrode, it changes the electrical characteristics of the channel layer and allows current to flow from the source to the drain.

In conclusion, the MRF6P18190HR5 is a field effect transistor (FET) designed for 1.8GHz and higher power amplification devices. It has a maximum power dissipation of up to 40W and a maximum drain efficiency of over 50%. It utilizes a type of field effect transistor called a MOSFET, which uses a gate voltage to control the current in the source-drain path. This FET is ideal for high power radio applications and is also suitable for other RF applications such as LAN receivers, LNAs, and TV and radio broadcast transmitters.

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