MRF6P21190HR5

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The MRF6P21190HR5 is a high power Gallium Nitride integrated MOSFET, designed specifically for use in high power radio frequency (RF) applications. It features high voltage, high power, and high thermal resistance, making it ideal for use in high power RF applications such as power amplifiers and transmitters. The MRF6P21190HR5 has a drain voltage up to 50V and a drain current of up to 20A making it suitable for a wide range of RF circuits. It is also suitable for use in radar and high performance microwave systems.

The MRF6P21190HR5 is a complementary power MOSFET device. It is composed of two MOSFET devices, a P-channel MOSFET and an N-channel MOSFET, both of which are controlled by a single gate voltage. When the gate voltage is at a logic high state, the P-channel MOSFET is turned on and the N-channel MOSFET is turned off, allowing current to flow from the drain to the source. When the gate voltage is at a logic low state, the N-channel MOSFET is turned on and the P-channel MOSFET is turned off, allowing current to flow from the source to the drain.

The MRF6P21190HR5 is designed to operate in high power RF environments such as cellular base station, mobile communications, and satellite transponder applications. It is specially designed to withstand high frequency, high voltage, and high thermal load conditions. The device is also designed to minimize electrical noise generated by switching operations and minimize the current consumption during standby operations.

The key features of the MRF6P21190HR5 include high power handling up to 20A, low on-resistance, high thermal resistance up to 10K/W, and low gate-threshold voltage. Its high power rating makes it ideal for use in high power RF applications, such as power amplifiers and transmitters. Its low on-resistance and high thermal resistance make it suitable for use in high temperature and harsh electrical environments. The device is also designed to reduce switching noise, which is an important factor for RF applications.

The MRF6P21190HR5 is a powerful device which has many advantages when used in RF applications. It has a high power rating up to 20A, a low on-resistance, and a high thermal resistance. It is also designed to reduce switching noise and minimize current consumption during standby operations. The device is suitable for a variety of high power RF applications, such as power amplifiers and transmitters. It is an excellent choice for use in radar and high performance microwave systems.

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