MRF6VP41KHR7

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Transistor Type:	LDMOS (Dual)
Frequency:	450MHz
Gain:	20dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	150mA
Power - Output:	1000W
Voltage - Rated:	110V
Package / Case:	NI-1230
Supplier Device Package:	NI-1230
Base Part Number:	MRF6VP41

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MRF6VP41KHR7 Application Field and Working Principle

The MRF6VP41KHR7 is a N–Channel RF power field effect transistor (FET). This device uses a high reliability process and is primarily designed for UWB, WLL and ISM band applications. The MRF6VP41KHR7 is designed for high linearity, excellent gain and high efficiencies from the 900 MHz to 6.0 GHz frequencies.

Application

The MRF6VP41KHR7 is widely used in many applications such as base station amplifiers, ultra wide band (UWB), frequency synthesizers, point-to-point radio links and other high linearity amplifiers. This device has power handling capability, reliable performance, and works well in high rates of linearity applications. The device is particularly suitable forCW, WLL, cellular, ESM and RFID applications.

Working Principle

The MRF6VP41KHR7 is a voltage controlled N–Channel Field Effect Transistor (FET). FETs are three-terminal devices which function as an electronically controlled switch or amplifier in an electric circuit. Volatge signal is applied to the gate and, under certain conditions, it operaes as either an amplifier or switch, depending on the operating state. The output of the FET is impacted not only by he voltage applied to the gate, but also by the frequency of that signal. When a voltage signal is applied to the gate, it creates an electric field which acts as a barrier, blocking current from flowing between the source and drain terminals. This is known as the cutoff state. When the voltage and frequency reach a certain level, the FET allows current to flow between the source and the drain terminals. This is known as the constitutive state. The MRF6VP41KHR7 transistor is designed for maximum power efficiency, which means that it can maintain high linearity and gain even with low gate to source voltages. Furthermore, the device can achieve high efficiency, with typical power added efficiency (PAE) of up to 70%.

Conclusion

In conclusion, the MRF6VP41KHR7 is a N–Channel RF power field effect transistor that is designed for high linearity, excellent gain and high efficiencies from 900MHz to 6.0GHz. The device is suitable for use in WLL, cellular, ESM and RFID applications and can provide high power handling capability and reliable performance. The device can also offer high linearity and gains even with low gate to source voltages, and is capable of achieving power added efficiency (PAE) of up to 70%.

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