MRF6S9045MBR1 Allicdata Electronics
Allicdata Part #:

MRF6S9045MBR1-ND

Manufacturer Part#:

MRF6S9045MBR1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 68V 880MHZ TO-272-2
More Detail: RF Mosfet LDMOS 28V 350mA 880MHz 22.7dB 10W TO-272...
DataSheet: MRF6S9045MBR1 datasheetMRF6S9045MBR1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 880MHz
Gain: 22.7dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 350mA
Power - Output: 10W
Voltage - Rated: 68V
Package / Case: TO-272-2
Supplier Device Package: TO-272-2
Base Part Number: MRF6S9045
Description

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The MRF6S9045MBR1 is a common 433 MHz RF MOSFET transistor. It is specifically designed for high frequency RF amplification and switching applications in the 470-512 MHz frequencies. The MRF6S9045MBR1 delivers low distortion, high frequency responsiveness and low noise amplification of RF signals, making it an ideal choice for many types of RF amplifiers. The MRF6S9045MBR1 is a field-effect transistor (FET), an electrostatically controlled device with three terminals that controls the signals in radio frequency applications.

The most common application of the MRF6S9045MBR1 is as an RF amplifier. The power output of these amplifiers is very good, often up to 25 watts. This makes it useful for applications such as wireless data transmission, wireless security systems, wireless LAN equipment, and other wireless communication systems. It is also used for UHF/VHF/SHF bandpass filters, gain splitting circuits, pre-amplifiers, oscillators, RF switches, and cellular/base station applications.

The working principle of the MRF6S9045MBR1 is based on the physics of electrons flow. When an input signal is applied, it triggers electrons within the semiconductor called an N-channel MOSFET. The input signal creates a strong electric field within the gate channel, which subsequently results in the gate channel filling up with electrons. This electron charge opens up a channel of conduction and increases the current flow through the device, resulting in amplification.

The MRF6S9045MBR1 is designed to deliver high power amplification and high frequency responsiveness with low distortion and low noise. It is the most common device used in UHF frequencies, making it competitive and suitable for most of the device applications. The device is also packaged into a small, surface-mountable, hermetically sealed package with excellent RF shielding.

Due to its great performance, the MRF6S9045MBR1 is widely used in commercial and military applications, from telecommunications to RF amplifiers and other stages of internet development. This makes it an important component for high frequency applications, allowing for great performance and long-term reliability.

The specific data is subject to PDF, and the above content is for reference

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