MRF6S19200HSR5

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RF (Radio Frequency) transistors come in a variety of shapes, sizes and configurations, but the MRF6S19200HSR5 is a particularly powerful and impressive design. This transistor is a highly efficient and versatile power amplifier from Motorola Solutions, and it is designed for use in a variety of radio frequency applications.

The MRF6S19200HSR5 is a N-channel enhancement-mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This type of transistor, a type of FET (Field Effect Transistor), works like a valve in that it can control the flow of electrons between source and drain pins. The N-channel enhancement-mode, in this case, means that when an electrical signal is sent to the gate pin, it will increase the conductivity of the transistor.

The MRF6S19200HSR5 has a very high breakdown voltage of 19.2V, the highest of any Motorola Solutions power amplifier MOSFET. This makes the device suitable for a wide range of applications, from linear amplifiers to switching circuits. It also has an impressive maximum power dissipation of 125W, which ensures that it can handle even the most demanding applications with ease.

The MRF6S19200HSR5 also boasts several other impressive features. It has a maximum gate-to-source voltage of +25V, a drain-to-source on-state resistance of 0.04 ohms, and a maximum drain current of 150mA. This makes it a powerful and reliable transistor for various radio frequency applications. It also has a maximum frequency of 550MHz, making it suitable for a wide range of radio frequency circuits.

The MRF6S19200HSR5 is known for its superb performance in various radio frequency applications. It is highly suited to use in amplifiers, oscillators, and switching circuits, due to its high output power, low resistance and low capacitance. It is also an excellent choice for use in digital signal processing applications, such as those used in the aerospace and defense industries. Additionally, the device is well-suited to use in RF-based automotive applications, such as in anti-theft or keyless entry systems.

The MRF6S19200HSR5 is an exceptionally powerful and reliable MOSFET transistor. With its 19.2V breakdown voltage, maximum power dissipation of 125W and maximum frequency of 550MHz, it is well-suited to a variety of radio frequency applications. The device also boasts low resistance, low capacitance and excellent heat dissipation, making it an ideal choice for use in various automotive control and communications systems.

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