MRF6S19120HSR3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRF6S19120HSR3 is a high-power N-channel enhancement-mode Silicon MOSFET transistor. It is specially designed for microwave applications on U-NII, ISM, SCADA, wifi, and Bluetooth bands. This device can handle up to 30 volts at 44 amperes, making it ideal for high-power RF amplifiers, RF power amplifiers, and linear applications in the 902-928 MHz frequency range.

The MRF6S19120HSR3 is a MOSFET transistor, which is a type of transistor that uses a metal–oxide–semiconductor (MOS) structure combined with a semiconductor substrate and a metal gate. This type of transistor exhibits several characteristics that make it advantageous for RF applications, such as high drain current in relation to the gate voltage, low power consumption, fast switching speeds, and high input resistance.

One of the primary features of the MRF6S19120HSR3 is its high current capability, which allows it to deliver high power levels within the 902-928 MHz frequency range. This is achieved by the transistor’s high-performance enhancement-mode technology and a quasi-vertical structure that helps reduce the on-resistance of the transistor.

In terms of operation, the MRF6S19120HSR3 exhibits a negative gate voltage threshold, meaning that the voltage at the transistor’s gate must be reduced in order for it to start conducting. This is an important feature for RF applications as it helps prevent accidental turn-on of the device, which can lead to unreliable operation or unwanted EMI emissions.

The MRF6S19120HSR3 is also capable of withstanding temperatures up to +170°C, which makes it suitable for use in high temperature applications, like automotive or aerospace equipment. As such, this device is an attractive option for manufacturers of electronic systems used in these environments.

Overall, the MRF6S19120HSR3 is an excellent choice for high-power RF applications within the 902-928 MHz frequency range. Its high current/high voltage capabilities, along with its negative gate voltage threshold, temperature-resistant package, and low on-resistance make it ideal for a wide range of RF applications. As such, the MRF6S19120HSR3 is an excellent solution for the medical, industrial, and consumer markets.

The specific data is subject to PDF, and the above content is for reference