MRF6S18140HR3 Allicdata Electronics
Allicdata Part #:

MRF6S18140HR3-ND

Manufacturer Part#:

MRF6S18140HR3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 68V 1.88GHZ NI880
More Detail: RF Mosfet LDMOS 28V 1.2A 1.88GHz 16dB 29W NI-880
DataSheet: MRF6S18140HR3 datasheetMRF6S18140HR3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 1.88GHz
Gain: 16dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 1.2A
Power - Output: 29W
Voltage - Rated: 68V
Package / Case: NI-880
Supplier Device Package: NI-880
Base Part Number: MRF6S18140
Description

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The MRF6S18140HR3 is a high-power, wideband N-Channel MOSFET that operates efficiently over a wide range of frequencies and provides superior RF performance in wireless and cellular applications. This device can also be used in other applications such as switching, amplifying and vibrating power, providing reliable power and performance whenever needed. It features extremely low RDSon at VGS = 8V and superior power efficiency.

In its most basic application, the MRF6S18140HR3 can be used as a switch between two points in a circuit. When the voltage is applied to the gate, the MOSFET is turned “on”, allowing current to flow through the channel and connecting the two points. When the gate is turned “off”, the channel remains open, thus preventing any current from passing. This on/off function of the MOSFET is what makes it useful for switching, amplifying and vibrating power in a wide variety of modern applications.

The MRF6S18140HR3 is also similar to other MOSFET devices in that it can be used for amplifying and vibrating power. When a voltage signal is applied to the gate, the channel opens allowing current to flow. As the current flows through the channel, it produces an amplified signal from the source to the drain and a frequency modulation or “vibrating” signal can be obtained through the drain connection. The MOSFET can be tuned to filter out unwanted frequencies by adjusting the gate and drain capacitance, which gives it its superior RF performance in wireless and cellular applications.

The MRF6S18140HR3 has a wide range of applications and can be used in a variety of applications. It is most commonly used in wireless and cellular applications, such as cellular phones, which require the MOSFET to switch, amplify and vibrate signals of different frequencies. It can also be used in wireless applications such as wireless base stations, wireless access points and wireless routers. With its superior RF performance and wide range of applications, the MRF6S18140HR3 is an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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