MRF6S9060MBR1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	880MHz
Gain:	21.4dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	450mA
Power - Output:	14W
Voltage - Rated:	68V
Package / Case:	TO-272-2
Supplier Device Package:	TO-272-2
Base Part Number:	MRF6S9060

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Introduction

The MRF6S9060MBR1 is a high-frequency N-Channel enhancement type MOSFET, developed by RF technology of ON Semiconductor. It is specially designed for use in a wide range of RF amplifiers and power circuits, providing dependable and stable performance for RF/microwave applications up to 6GHz. It is packaged in a 1.2mm surface mount package and has a breakdown voltage of 60V, a drain-source voltage of 40V and a drain current of 10.6A.

Application field

The MRF6S9060MBR1 is a power transistor that is mainly used in high-power microwave circuits, such as amplifiers and switches. It can be found in 433MHz, 868MHz and 1.2GHz wireless communication systems. If the power handling requirements exceed the capabilities of conventional quiescent current limited transistors, this device must be used due to its high efficiency and low noise. These devices can also be employed in applications such as wireless power transmission, wireless charging, and wireless power conversion, due to its low parasitics.The MRF6S9060MBR1 also has other applications, such as in broadband legacy applications, cables, point-to-point radios, transceivers, base station amplifiers and antenna remotes. These devices also have applications for military and space applications, as well as medical and industrial equipment.

Working Principle

The MRF6S9060MBR1 works in the depletion mode of operation, where the FET is turned “on” when the voltage at the gate is lower than the voltage at the source. This means that when the gate voltage is zero, the FET is in the “off” state, and when the gate voltage is positive, the FET is in the “on” state.The currents comes from the drain-to-source and is controlled by the gate-to-source voltage, allowing for an efficient use of energy. The FET amplifier acts as an adjustable resistor, allowing for an adjustable current flow from the drain-to-source. This current flow allows for amplifying an input signal, producing an output signal. This output signal is used to power devices such as transistors, amplifiers, and others.

Conclusion

The MRF6S9060MBR1 is a high-frequency N-Channel enhancement type MOSFET developed by RF technology of ON Semiconductor. It is used in a wide range of applications, from wireless communications to medical and military equipment. The device allows for an efficient use of energy and works in the depletion mode of operation, where the FET is turned “on” when the voltage at the gate is lower than the voltage at the source. The MRF6S9060MBR1 is an ideal choice for applications requiring high-power and low-noise.

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