MRF6V12250HSR3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Transistor Type:	LDMOS
Frequency:	1.03GHz
Gain:	20.3dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	100mA
Power - Output:	275W
Voltage - Rated:	100V
Package / Case:	NI-780S
Supplier Device Package:	NI-780S
Base Part Number:	MRF6V12250

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The MRF6V12250HSR3 is an N-channel enhancement-mode radio frequency (RF) power field effect transistor (FET) and is commonly used in RF power amplifiers, cellular, and broadband applications. This FET is designed to operate from 6 to 8 V and can provide up to 250 W peak power (typically 100 W) and 250 MHz bandwidth.

What is a FET?

A field-effect transistor (FET) is a transistor that works by controlling the current flow between source and drain terminals by using an electric field. FET transistors are unipolar because the electric current is only conducted by majority carriers. As compared to a bipolar junction transistor (BJT), FETS are much smaller and consume less power, making them ideal for high frequency, low power applications. FETs can be used in digital switching, analog signal processing and radio frequency (RF) amplifiers.

MRF6V12250HSR3 Application Fields

The MRF6V12250HSR3 is ideal for RF power amplifiers, cellular, and broadband applications. The FET has a maximum drain current of 6.2 A, a maximum drain-source voltage of 30 V, and a maximum power dissipation of 200 W.The MRF6V12250HSR3 also offers a maximum gain of 19.7 dB and a broadband noise figure of 0.75 dB – an important parameter for many applications like cellular and Wi-Fi networks. This FET also has low maximum non-recurring transient thermal impedance junction to case (ZthJC) of 1.64°C/W, which ensures long-term stability and reliability.

MRF6V12250HSR3 Working Principle

The MRF6V12250HSR3 works on an enhancement-mode principle. This means that the current flowing between source and drain increases as the gate voltage is increased. In this transistor, the operation works such that when the gate is “OFF” the voltage between drain and source remains constant and, therefore, so does the current. When the gate is then “ON”, the current increases exponentially with the increase in gate voltage. This increase in current allows for an amplification effect.The MRF6V12250HSR3 is commonly used in RF power amplifiers, cellular, and broadband applications because of its high amplification and low power consumption, as well as its ability to operate over a wide frequency range. It is an ideal choice for many applications which require RF switching, amplification, and bi-directional communication.

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