MRF6V13250HR3

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The MRF6V13250HR3 is a high-power, wideband, high-efficiency, multi-mode RF power transistor designed specifically for use in industrial, scientific, and medical ISM-band (including spread spectrum) applications. It features integrated collectors, gate, drain and gate drivers, and a wide-open gate architecture to make the best use of the available RF power. This transistor is highly reliable and robust, has excellent gain and efficiency, and is easy to set up and operate with minimal external components.

The MRF6V13250HR3 application field includes cellular and PCS base stations, wireless communication systems, audio amplifiers and various factory automation control systems where high-power efficiency is critical or where the device may be exposed to ESD and RF immunity conditions. This device is designed to operate at frequencies up to 6GHz. This provides a wide range of potential applications in the ISM bands.

The MRF6V13250HR3 is a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) which belongs to the class of "Field Effect" transistors. In a MOSFET, the electric field between the gate and the channel region controls the current flow between the drain and source terminals. This makes it possible to control the current flow between these two terminals without the need for any direct electrical contact. Most of the current flow occurs in the channel between the source and the drain Terminals. The device has a drain to source breakdown voltage of 24V, which provides excellent protection for the device against overvoltage damage.

The MRF6V13250HR3 is an ideal device for high frequency RF applications due to its wide bandwidth and high efficiency. It is capable of delivering up to 16dBm (4.4W) of power which is more than enough for most ISM applications. The device also has a very low compression point (Vgs@comp) of 7V, which makes it ideal for high efficiency applications. The device also has excellent FET-like performance characteristics, low distortion and excellent linearity at high frequencies. The high breakdown voltage of 24V makes it capable of handling high voltage spikes along with ESD conditions.

The MRF6V13250HR3 is designed to operate at frequencies up to 6GHz and features integrated gate, drain, and gate drivers. It also has a wide-open gate architecture which allows for optimum use of available RF power. The device is highly reliable and robust, has excellent gain and efficiency, and is easy to set up and operate with minimal external components. It is also capable of withstanding high voltage, has a low compression point (Vgs@comp) of 7V, and has a drain to source breakdown voltage of 24V which provides excellent protection for the device against overvoltage damage.

In conclusion, the MRF6V13250HR3 is a high-power, wideband, high-efficiency, multi-mode RF power transistor specifically designed for use in industrial, scientific, and medical ISM-band (including spread spectrum) applications. It is capable of delivering up to 16dBm (4.4W) of power and features excellent FET-like performance characteristics, low distortion and excellent linearity at high frequencies. The device also has integrated gate, drain, and gate drivers as well as a wide-open gate architecture which allows for optimum use of available RF power. With these features, it is easy to see why the MRF6V13250HR3 is highly sought after for RF applications.

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