MRF7S18170HSR3

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The MFR7S18170HSR3 is a laterally diffused metal oxide semiconductor field effect transistor (LDMOSFET). The device provides higher power and better efficiency than bare MOSFETs and is specifically designed for use as part of a radio frequency (RF) power amplifier in commercial and mobile communication applications.
The MFR7S18170HSR3, designed by Freescale Semiconductor, is a lateral-diffused metal-oxide semiconductor (LDMOS) field-effect transistor (FET) designed for use as part of an RF power amplifier. LDMOSFETs are ideal for this purpose because they offer the benefits of increased power, improved efficiency and smaller size. The MFR7S18170HSR3 is specifically designed for high frequencies, up to 4.2GHz, and provides a power output of 450W with a drain efficiency of up to 75%.
The MFR7S18170HSR3 is a high power, high gain and rugged device suitable for use in environments with large average-signal swings and large change rates. It is typically used for amplifier designs optimized for linearity in commercial and mobile radio systems. It can be used in both base station and mobile installations allowing consistent performance in applications such as satellite communications systems, broadcast and two-way radio, cellular base station amplifiers, microwave power amplifiers, radar, and cellular telephone infrastructure.
The MFR7S18170HSR3 has an on-state resistance (RDSon) of 18 m? and a maximum drain-source breakdown voltage (BVDSS) of 175V. It is supplied in an industry-standard plastic power quad flatpack (QFN) package and is designed to operate between -55°C to 175°C up to 4.2GHz.
The working principle of an MFR7S18170HSR3 is similar to that of a non-LDMOS FET. The MFR7S18170HSR3 is an n-channel field effect transistor with four terminals: source, gate, drain and body. Applying a voltage to the gate controls the current flow between the drain and the source. This is because the voltage applied to the gate creates a field that changes the conductivity of the MOSFET channel. A positive gate voltage creates more channels for the current to pass through and a negative gate voltage decreases the number of channels.
The MFR7S18170HSR3 has been specifically designed to provide high power and high efficiency when used as part of a radio frequency power amplifier. It provides high gain, high ruggedness and consistent performance, making it ideal for use in commercial and mobile radio systems. It offers a high drain efficiency of up to 75% and a power output of 450W. By virtue of its efficient design and superior performance, the MFR7S18170HSR3 can help reduce the size and cost of RF power amplifiers.

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