MRF7S27130HSR5

MRF7S27130HSR5 is a silicon MOSFET transistor designed for high frequency wireless applications such as Wi-Fi, LTE, and microwave point-to-point transmission. The device has been designed to operate at frequencies up to 27.0 GHz, and is offered in a 3-pin SOT-323 package. It is available in two power levels: 30 W and 70 W. The device is characterized by an extremely low input capacitance (5 pf) and an ultra-low on-resistance (2.5 Ω).

Application field

MRF7S27130HSR5 is ideal for applications that require high linearity, high efficiency, and low noise performance. It has been used in Wi-Fi and LTE base stations, WLAN access points, WiMAX links, and high power microwave amplifiers. It is also suitable for other RF power applications such as power combining amplifiers, mobile communications, and base station amplifiers.

Working Principle

MRF7S27130HSR5 is a type of MOSFET, or metal-oxide-semiconductor field-effect transistor. It is a four-terminal semiconductor device composed of layers of doped semiconductor material—the source, drain, and gate. When a gate voltage is applied, an electric field is created which modulates the shape and conductivity of the channel created between the source and drain terminals. This controllable electric field is what makes MOSFET transistors so widely used in modern electronic circuits.

MRF7S27130HSR5 is a high-efficiency device due to its ultra-low input capacitance and on-resistance. This allows the device to more quickly respond to varying gate voltage levels and to reach a high level of efficiency even at higher frequencies. It has a maximum drain-source voltage of 30 V, gate-source voltage of -4.6 V to +6 V, and a case temperature of up to +150°C.