MRF7S19210HR5

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MRF7S19210HR5 Application Field and Working Principle

The MRF7S19210HR5 is a N-Channel RF power field effect transistor that is designed primarily for the use of WiMax and multi-carrier applications. It is versatile, with a range of up to 28V drain-source voltage (Vdss), a small surface-mount form factor (3mm x 1.5mm), and a high power gain. The device is also designed with a linear load capability, allowing it to be used as a amplifier, oscillator, low noise amplifier, or a frequency multiplier.

Device Construction and Characteristics

The MRF7S19210HR5 features an integrated Slant Gate Structure, a metal gate dielectric that provides higher reliability and improved performance when compared to conventional silicon gate technology. It features a total gate charge (Qg) of 0.45nC, a maximum drain current (Id) of 19A, and a maximum drain-source voltage (Vdss) of 28V. It also offers an excellent drain efficiency, with a drain-source breakdown voltage (BVdss) of 28V. In addition, the device has a total gate charge (Qg) of 0.45nC, a maximum adjacent drain-source drain-source capacitance (Cds) of 0.5pF, and a maximum total gate-drain capacitance of 5.3pF.

Application Fields

The MRF7S19210HR5 has a wide array of applications. It is a versatile RF device, suitable for use in WiMax and multi-carrier systems. It has a wide range of power gain and is well suited for low noise and high linearity applications in oscillators, amplifiers, and frequency multipliers. It can be used for mobile radio, satellite communications, microwave communication, agro-tracking, and remote sensing applications. It is also ideal for automotive applications, such as in telematics systems.

Working Principle

The working principle of the MRF7S19210HR5 is based on field effect transistors. The device is operated in enhancement mode in which the transistor operates as an amplifier, oscillator, low noise amplifier or frequency multiplier. In this mode the transistor is driven by a voltage source which allows current to flow through the gate of the transistor. This causes a change in the input impedance of the transistor. A higher voltage applied to the gate of the transistor will raise its input impedance, while a lower voltage will lower it. By controlling the voltage applied to the gate, the transistor can be used to amplify, oscillate and switch signals.

Conclusion

In conclusion, the MRF7S19210HR5 is a versatile N-Channel RF power field effect transistor that is designed primarily for the use of WiMax and multi-carrier applications. It features a range of up to 28V drain-source voltage (Vdss), a small surface-mount form factor (3mm x 1.5mm), and a high power gain. The device is also designed with a linear load capability, allowing it to be used as an amplifier, oscillator, low noise amplifier, or a frequency multiplier. It has a wide array of applications, such as in WiMax and multi-carrier systems, mobile radio, satellite communications, microwave communication, agro-tracking and remote sensing applications, as well as in automotive applications. The device operates on the principle of field effect transistors by controlling the voltage applied to its gate, which enables it to amplify, oscillate, switch and amplify low noise signals.

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