MRF7S16150HR5

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MRF7S16150HR5 is a high-power, field-effect transistor used in radio frequency (RF) applications. It is made by Freescale Semiconductor and is part of the company’s RF Power Transistor product line. The transistor is designed to optimize power output in radio frequency amplifiers and related applications. The MRF7S16150HR5 has the following features: an absolute maximum rating of 150 watts, an operating frequency range of 1.7 to 2.6 GHz, and 150 volts at 100 milliamps drain current.

The MRF7S16150HR5 is a depletion mode, enhancement-type device. This means that it operates by increasing the built-in electric field when a gate voltage is applied. When the electric field is increased, the physical size of the circuit decreases. This reduces capacitance, limits current flow, and increases the resistance of the device.

In addition to its use in radio frequency amplifiers, this transistor is recommended for applications such as: mobile base station power amplifiers, TV broadcast power amplifiers, cellular base station power amplifiers, satellite transponders, personal computers, and other devices that require power amplification. MRF7S16150HR5 is designed to deliver reliable RF performance in a high power package.

The MRF7S16150HR5 features a hermetically sealed structure that allows it to withstand extreme temperature variations, moisture exposure, and vibration. It also offers low noise, high linearity, and high power efficiency. This ensures that the transistor provides excellent RF performance while operating in noise and interference-prone environments. Additionally, the MRF7S16150HR5 has a low gate threshold, meaning it can quickly turn on and off when needed.

The transistor is available in a variety of package types, including the TO-220, TO-262, and TO-264. The TO-220 package is the most commonly used, as it offers an optimized package size and performance. The TO-262 and TO-264 packages offer enhanced power handling capabilities, and are primarily used in higher-power applications. Additionally, the MRF7S16150HR5 is also available in a variety of die configurations, such as the FLAT, P-Pak, and W-Pak.

Due to its high-power output, excellent linearity, and hermetic structure, the MRF7S16150HR5 is an ideal device for RF applications in the modern age. The transistor is well-suited for use in mobile base station power amplifiers, terrestrial television broadcast power amplifiers, and other power amplification applications. Its hermetic structure ensures it is reliable in extreme temperatures and environments, and its low gate threshold ensures it can quickly turn on and off when needed.

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