MRF7S19170HR5

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MRF7S19170HR5 is a RF power MOSFET transistor in the surface-mount package, offering an excellent GFET performance in WCDMA and LTE applications. It is designed to generate large output power in efficiency and linearity. The device has an internal source drain feedback which incorporates operating temperature, device geometrical dimensions and output inductor value, offering improved single-ended power gain match and reduced error vector magnitude.

The MRF7S19170HR5 transistor is designed for RF amplifiers, linear small sign amplifiers, mobile base station applications, data links in the range of 879-960 MHz. It has a drain to source voltage of 28V, gate to source voltage of ±15V, typical current gain of 16.5 dB, collector to emitter saturation of 12.6V, drain efficiency of 32%, and a gate charge of 770 nC.

Power MOSFET transistors, like the MRF7S19170HR5, use metal-oxide semiconductor field effect transistor (MOSFET) technology. The transistor consists of two MOS capacitors connected in series between source and drain. The gate electrode is connected to the common source and drain electrodes and is used to control the flow of current. When the device is biased with sufficient gate voltage, electrons are depleted from the gate dielectric and holes are filled in the depletion zone. The resultant electric field creates barriers which regulate the movement of charge carrier.

When the gate voltage is positive, it further depletes carriers from the interfacial layers. This increases the conductivity of the channel and enhances the mobility of electrons from source to drain. As a result, the device enters the enhancement mode and acts as an amplifier, opening and closing the drain to source channel. Conversely, when the gate voltage is reversed, the carriers are filled, the channel is switched off and the device is in the off state.

In order to achieve performance optimization, the MRF7S19170HR5 transistor is designed with a number of features, like thermal stability, noise immunity, low bifurcation, integrated drain-source feedback and polarization independence. This provides improved single-ended power-gain matching, improved error vector magnitude and improved linearity. Additionally, the transistor has inherent self protection against faults, like over-temperature and electro-static discharge protection.

In summary, the MRF7S19170HR5 transistor is an excellent choice for WCDMA and LTE applications, offering superior features for improved performance. With high levels of drain efficiency, low input and output impedances, low channel non-linearities, low power consumption, low cost, and easy integration, the MRF7S19170HR5 is one of the best solutions for RF power amplifiers.

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