MRF7S27130HR5

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The MRF7S27130HR5 is a high power semiconductor device, it is used primarily in radio frequency (RF) power applications. It is a Field-Effect Transistor, commonly known as a FET, and more specifically is a source-lateral MOSFET.

This type of FET has a very wide application field. It is extensively used in RF amplifiers, from low to high power levels, typically with a drain voltage from 30 to 60 volts and drain currents from a few amperes up to 150 amperes. It is also applied in mobile radio, local cordless telephones, microwave power amplifiers and other radio frequency equipment.

The common source drain voltage range of the MRF7S27130HR5 is -60V to +60V, which can be used at drain currents of up to 150 amperes. The maximum RF output power of the device is claimed to be 450 watts at 130MHz, with a useful peak gain of 15dB. The large amount of power storage and the ability to withstand large voltage swings makes it suitable for use in a wide range of RF applications.

The MRF7S27130HR5 is a depletion-mode transistor, meaning its conductivity is controlled by the amount of voltage applied to the Drain. The conductivity of the MOSFET can be controlled precisely by changing the drain-gate voltage, allowing for continuous changes of the output from low to high levels. It is designed to operate with very low drain-gate voltage and current, ideal for high frequency operation with minimal distortion.

The working principle of the MRF7S27130HR5 is based on a reverse-biased junction. A gate voltage is applied to the source, gate, and body connections. When this gate voltage is increased, the current flowing from the drain to the source is increased, allowing the transistor to amplify an input signal by increasing the output signal. In this example, the gate voltage change causes an increase in the current flowing to the drain, and this increase in current is translated into an amplified output signal. This ability to amplify an input signal is the key characteristic of a FET.

The unique structure of the MRF7S27130HR5 makes it well-suited for use in RF applications. Its largely linear characteristics enable it to amplify a wide range of frequencies, including low frequencies. This makes the device suitable for use in applications such as radio receivers and other devices, where selectivity is important. Furthermore, its large power handling capacity, low voltage and current, low distortion and good frequency band selection allows it to be used in high power RF output amplifiers, as well as in low frequency signal operation.

The MRF7S27130HR5 is an ideal choice for use in any RF application where flexibility and performance are essential. Its wide application field, power handling capacity, low voltage and current requirements, linear characteristics and low distortion enable it to outperform other FETs in many of these applications. As such, it is a very useful device in many RF power applications, from low to high frequency levels.

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