MRF7S38075HSR5

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The MRF7S38075HSR5 transistor is a high gain, silicon N-Channel Enhancement Mode, Radio Frequency (RF) designed MOSFET. This particular transistor is designed specifally for applications ranging from amplifiers to analog circuits such as modulators, demodulators, and frequency multipliers.

A transistor is an electronic switch with three pins, a source, a drain, and a gate. The current flowing in a transistor is controlled by the voltage applied to its gate. The MRF7S38075HSR5 is an N-Channel MOSFET, which means that the current flow is from the drain to the source. The transistor will be conducting when the voltage on the gate is greater than the threshold voltage of the MOSFET.

The MRF7S38075HSR5 has a breakdown voltage of about 80 V, and a maximum drain current of about 15A. The maximum gate-source voltage (VGS) is 10V and the total gate charge (Qg) is 15 nC. It has a maximum power dissipation of 105 Watts, and an overall gain (hFE) of 234.

The most important feature of the MRF7S38075HSR5 is its high gain, which makes it ideal for RF applications such as amplifiers and modulators. Due to its high gain, the MRF7S38075HSR5 can be used in applications requiring high linearity, such as CATV systems. The device also features low input capacitance and low gate output capacitance, which reduce the DC power consumption of the system and improve the efficiency of the circuit.

In addition, the MRF7S38075HSR5 has a wide range of input and output impedances, allowing for improved signal levels and gain. The device also has a higher thermal resistance than most MOSFETs, making it suitable for applications that require high power dissipation and thermal stability. The device also has a higher switching frequency than most MOSFETs, allowing for improved signal fidelity.

The MRF7S38075HSR5 offers an ideal combination of high gain and low operating power. This makes the device suitable for applications such as cellular base stations, modems, and microwave links. The device also offers improved linearity and fidelity compared to other MOSFETs, making it ideal for CATV systems. In addition, the device has a higher switching frequency than most MOSFETs, allowing for improved signal fidelity.

In summary, the MRF7S38075HSR5 is a high gain, silicon N-Channel Enhancement Mode, Radio Frequency (RF) designed MOSFET. Its high gain, low operating power, improved linearity, and high switching frequency make it ideal for a variety of applications, such as amplifiers, modulators, frequency multipliers, cellular base stations, modems, and microwave links.

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