MRF7S18170HR5

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The MRF7S18170HR5 is a high-power RF and Microwave MOSFET Transistor from NXP. This device is designed for use in 50-ohm communication systems and it combines high output power, high linearity, and very low gate-source capacitance. It is ideal for applications such as radar, phased-array applications, and variable power amplifiers in radio transmitters.

The MRF7S18170HR5 has the following features: a maximum drain-source voltage of 175V; a maximum drain-gate voltage of 55V; an operating temperature range of -55°C to 175°C; a maximum power dissipation of 1024W,; and a frequency range of 12.5kHz to 1500MHz. It also offers a maximum drain current of 112A and a peak gain of 10dB.

The working principle behind the MRF7S18170HR5 lies in its construction. This device is a metal oxide semiconductor field-effect transistor (MOSFET). It works by manipulating the volume of a channel between two electrodes, or gates, that control current flow. When the voltage of one gate is changed, the width of the channel changes, allowing more or less current to flow through the MOSFET. This control of current flow is what makes the MRF7S18170HR5 so well-suited for radio applications.

The MRF7S18170HR5 is most commonly used as an RF power amplifier in microwave communication systems. It is ideal for use in receivers, mobile phones, base stations, satellite communication, radar systems, and phased array applications. It can provide reliable, high-power performance even in harsh conditions such as high-power transmitters.

The MRF7S18170HR5 is an excellent choice for RF-based applications because of its performance characteristics. It offers a highly linear performance over its frequency range, as well as low gate-source capacitance and a low noise figure. Additionally, it has a low gate-drain capacitance, as well as a low gate-drain voltage, thus providing enhanced power-added efficiency. It also features a low gate charge and low gate resistance, allowing for improved control of the device.

In conclusion, the MRF7S18170HR5 is an ideal choice for radio frequencies applications due to its design and performance characteristics. It is well-suited for use in mobile phones, base stations, satellite communications, and radar systems, as well as other applications. The high power output, high linearity, and low gate-source capacitance make it the perfect choice for these types of applications.

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