MRF7S21150HR3

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The MRF7S21150HR3 is a high-power, high-voltage metal oxide semiconductor field effect transistor (MOSFET). The device was designed and manufactured by Freescale Semiconductor, now a part of NXP Semiconductors. It is a RF field effect transistor that is used for applications such as linear amplifiers, switching and oscillators.

The MRF7S21150HR3 is a vertical MOSFET which features an insulated gate. It is rated at operating frequencies of up to 150 MHz and a VDSS of 75 V. It is also rated at a maximum power dissipation of 250 W and an RDS(on)max of less than 0.7 ohm. This device is also capable of handling an input power of up to 10 W.

The working principle of a MOSFET is very simple. When a voltage is applied to the gate of the device, it creates an electric field which forces electrons to move through the device. This causes a flow of current between the drains, which is related to the gate voltage. By increasing or decreasing the voltage applied to the gate, the amount of current that can pass through the device can be adjusted.

One of the main applications for the MRF7S21150HR3 MOSFET is for use in linear amplifiers. By using the device to amplify signals, it is possible to increase the power of the signal by a large amount. In addition to linear amplifiers, the device can also be used in switching and oscillator applications. When employed correctly, it can be used to great effect in these contexts.

The MRF7S21150HR3 is a versatile and powerful RF field effect transistor that is suitable for a number of different applications. Thanks to its high power rating, it is capable of handling high power applications and is able to efficiently pass large amounts of current. Its insulated gate and low on-resistance make it ideal for use in linear amplifiers, switches and oscillator circuits.

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