MRF7S21210HSR5

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The MRF7S21210HSR5 is a depletion mode RF field-effect transistor (FET) with a DC drain-source breakdown voltage rating of 12 volts. The rated drain-source current is 50 Amps and the typical current gain is 2000. The RF Transistor is housed in a plastic package and has an integrated heat sink. The FET has a low noise gain flatness of ±1dB over a range of 800 MHz – 2190 MHz. It is ideal for use in applications such as digital television transmitters, WiMax, point-to-point microwave, and wireless applications requiring an output power of 200 mW.

The MRF7S21210HSR5 is designed for use in a Class A configuration with an external source of high-power bias. It operates on a drain supply of +12V and a gate voltage of +6V. The device has a maximum frequency of operation of 2800 MHz and a minimum frequency of operation of 500 MHz.

The FET works on the principle of field-effect. By applying a voltage a electric field is created. This electric field attracts electrons and they move towards the electric field. This way the electrons will bridge the gap between the gate and the source and drain. This is known as the field-effect. The electric field is proportional to the voltage applied, so higher the voltage, higher the electric field.

The MRF7S21210HSR5 is primarily used in applications requiring high power output. It is suitable for amplifying signals in the frequency range of 800 MHz – 2190 MHz. Examples of applications where the FET is used are high-power radio-frequency (RF) amplifiers, digital television transmitters, WiMax, point-to-point microwave, and wireless applications that require an output power of 200 mW. Owed to its excellent impedance matching characteristics, the FET is often employed in circuit designs that integrate low and high-power microwaves.

The MRF7S21210HSR5 is a reliable and efficient component for use in high-power RF applications. Its high current gain, frequency range, and robust design make it ideal for a variety of tasks. It is a cost-effective and readily available choice for those looking for a solid RF transistor.

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