MRF7S38010HR5

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The MRF7S38010HR5 is a leadless surface mount power amplifier transistor. It is part of the MRF7S series manufactured by Freescale Semiconductor, Inc. Its intended use is in a wide range of applications including base stations, repeaters, and in-building solutions. The transistor has an excellent gain to power relationship, allowing it to deliver large amounts of RF power while consuming less power than competing technologies. The key features of the MRF7S38010HR5 include an industry-leading P(1dB) of 29.2dBm, a thermal resistance of 7.5K/W, and a peak average power of 185W.The MRF7S38010HR5 is a N-channel enhancement-mode field effect transistor (FET). It is a LDMOS (laterally diffused metal oxide semiconductor) device, which means that it consists of multiple parallel transistors connected in a single package. It operates in the 3.1 to 3.2 GHz ISM band, and has a drain saturation voltage of 8.25V. The working principle of the MRF7S38010HR5 is fairly straightforward. It is a three-terminal device, consisting of a source, drain, and gate terminals. The gate terminal is connected to a voltage source, which controls the electrical field created between the source and drain. When the source and drain are connected to a power source, such as a battery, current will flow through the transistor. The amount of current flowing through the transistor is controlled by the voltage applied to the gate terminal.The MRF7S38010HR5 is well-suited for a variety of RF applications, such as LTE, WCDMA, and WiMAX systems. It can be used in cellular base stations, wireless access points, and repeaters. It has a low thermal resistance which allows it to operate at high temperatures, making it ideal for long-term, continuous operation. Additionally, its low gate-source capacitance ensures that it responds quickly to changes in the drain voltage, resulting in low distortion and improved linearity. In summary, the MRF7S38010HR5 is an excellent choice for a wide range of RF applications. Its combination of low power consumption and high power output make it well-suited for base stations, repeaters, and Wi-Fi access points. Its low thermal resistance and gate-source capacitance ensure that it delivers excellent performance with minimal distortion and improved linearity.

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