MRF7S21080HR5

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The MRF7S21080HR5 is an enhancement-mode silicon field-effect transistor (FET) designed for use in Class A1-A4 UHF and VHF power amplifiers in communications systems. It is especially useful in applications with the output power requirements of up to 240 watts in the frequency range from 750 MHz to 1000 MHz. The MRF7S21080HR5 is optimized for linear amplification and has extremely low distortion characteristics to enhance the audio quality of the amplified signal.

The MRF7S21080HR5 falls under the classification of RF transistors, and more specifically within the FET and MOSFET family. It is an LDMOS (laterally diffused metal oxide semiconductor) device, which means that the active region of the transistor is formed by diffusing metal into the gate oxide layer instead of the traditional polysilicon. This type of transistor usually offers higher power capabilities and greater operating temperature range than other types.

The circuit diagram of a typical RF amplifier containing a MRF7S21080HR5 is shown in Figure 1. This circuit contains a two-stage, fixed-amplitude, untuned amplifier with a power gain of 15 dB. To prevent oscillations and also to reduce the device’s thermal resistance, a spreader plate connected to a cool air inductor is used.

The MRF7S21080HR5 is normally operated at drain voltages of up to 50 V, and at pinch off voltages of up to 5.6 V. It has a gate-source capacitance of 3.2 pF and an on resistance of about 0.1 ohms. With a single-ended input, the power gain is 7.5 dB, and with a push-pull input, it is 15 dB.

The MRF7S21080HR5 can be used in a wide range of applications and is popular in UHF and VHF systems including television broadcast, Amateur Radio, two-way communications and others. It is also used in a variety of marine antennas, satellite antennas, and radar systems.

The working principle of the MRF7S21080HR5 is based on the same principle as any other FET or MOSFET. The transistor contains a source and drain, and the gate terminal controls the current flow between the two. When a voltage is applied to the gate, it attracts electrons from the channel, reducing the resistance of the channel and allowing current to flow between the source and drain.

The MRF7S21080HR5 has a very fast switching time, with a typical turn-off time of 15 ns and a typical turn-on time of 7 ns. This allows the device to be used in high-speed applications such as communications systems, where fast switching times are a must.

The MRF7S21080HR5 has many advantages over other transistors, such as its high power capability, low distortion, low on resistance and the ability to operate in a wide operating temperature range. The device is also relatively inexpensive and reliable, making it an attractive choice for RF applications.

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