MRF7S19170HSR5

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MRF7S19170HSR5 is a laterally diffused metal oxide semiconductor (LDMOS) power transistor developed by Freescale Semiconductor. It is specifically designed for use in broadband commercial and amateur radio applications such as RF power amplifiers (PAs) and digital radio systems.

The MRF7S19170HSR5 is a RF MOSFET offering an output power of approximately 50 W when biased at 28 V over a broadband frequency range of 700 to 1000 MHz. Its maximum supply voltage is 40 V, and the gate voltage applied to the device must never exceed ±20 V. In addition, the device has a thermal resistance of 10 K/W, good intermodulation performance, and a low input impedance.

The working principle of MRF7S19170HSR5 is based on O-MESH technology, a new manufacturing process developed by Freescale which makes the device more efficient than traditional MOSFETs. In essence, O-MESH technology is a highly uniform layer of metal oxide insulation surrounding two highly conductive channels. When a voltage is applied to the gate, the insulated layer of the channel system is broken down and the current is allowed to flow. This field effect transistors provides low on-state resistance and consistent switching characteristics across its entire frequency range.

The MRF7S19170HSR5 is mostly used as an output stage in 802.11a/g/n/b/ac Wi-Fi systems as well as other data telecommunication systems to provide greater power efficiency. It is also used in high power broadband amplifiers, FM Radio transmitters and home automation systems in order to increase the reach and coverage of their broadcast signals. In addition, the device can be used in power amplifiers for mobile communications applications and land-mobile radios due to its high linearity and low intermodulation distortion.

In conclusion, the MRF7S19170HSR5 has been designed for use in a variety of radio frequency applications and offers excellent performance characteristics for power amplifiers, Wi-Fi systems, FM radio transmitters and other data communication systems. Its high linearity and low intermodulation distortion enable it to efficiently power these applications with minimal power consumption. Finally, the device is manufactured using O-MESH technology which provides enhanced performance in comparison with conventional MOSFETs.

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