Allicdata Part #: | MRF7S18125AHSR3-ND |
Manufacturer Part#: |
MRF7S18125AHSR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 1.88GHZ NI780S |
More Detail: | RF Mosfet LDMOS 28V 1.1A 1.88GHz 17dB 125W NI-780S |
DataSheet: | MRF7S18125AHSR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 1.88GHz |
Gain: | 17dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.1A |
Power - Output: | 125W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S |
Supplier Device Package: | NI-780S |
Base Part Number: | MRF7S18125 |
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The MRF7S18125AHSR3 is a high-powered, high-performance MOSFET transistor that belongs to the family of RF (Radio Frequency) transistors. It is a high voltage, high-performance device that can be used for a variety of applications, and its working principle is based on the MOSFET principle which makes it an ideal choice for RF applications.The MRF7S18125AHSR3 is a single-pole, single-throw device that operates on a maximum voltage of 18 volts and a maximum current of 125 amps. This device is specifically designed for the high-power needs of RF applications, providing an efficient and reliable solution for power delivery and amplification. The MRF7S18125AHSR3 offers a wide range of features and functions, which makes it suitable for a variety of applications.The MRF7S18125AHSR3 features a dual-gate construction which allows the user to switch between output power and gain levels. Its gate voltage can be set to either positive or negative, providing a high level of gate control. This gate voltage can be used to control the gate current, enabling the current to be switched between positive and negative. This provides the user with the flexibility to adjust the power and gain levels in the RF circuit.The MOSFET transistor also features a special "self-enhancement" mode that is used for non-saturated applications. In this mode, the gate voltage is applied to the drain as well as the source. This allows the device to maintain a higher drain current and achieve a higher performance level.Another unique feature of the MRF7S18125AHSR3 is its metal oxide semiconductor (MOS) diode construction, which provides the user with improved switching speed and stability. This MOS diode is composed of two metal oxide layers, which provide optimal protection for the device\'s gates and drain contact.The MRF7S18125AHSR3 is also designed with a temperature-compensated design which allows it to operate at a wide range of temperatures. This makes it ideal for use in a wide range of applications, including automotive, consumer, audio, and industrial applications.The MRF7S18125AHSR3 is a powerful and reliable MOSFET transistor that is specifically designed for RF applications. It features advanced features and functions, including a dual-gate construction, self-enhancement mode, and temperature-compensated design. This makes it an ideal choice for a variety of applications, including automotive, consumer, audio, and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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