MRF7S38040HR3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	3.4GHz ~ 3.6GHz
Gain:	14dB
Voltage - Test:	30V
Current Rating:	--
Noise Figure:	--
Current - Test:	450mA
Power - Output:	8W
Voltage - Rated:	65V
Package / Case:	NI-400-240
Supplier Device Package:	NI-400-240
Base Part Number:	MRF7S38040

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MRF7S38040HR3 application field and working principle

Introduction

MRF7S38040HR3 is a kind of RF power transistor which utilizes the LDMOS technology patented by Freescale, and can perform very good in high frequency and high power applications. Its performance is as good as the latest version of GaN RF power transistor and is highly favored by many electronic engineers who value performance.

Application Field

MRF7S38040HR3 mainly used in high frequency and high power application, and the maximum value of output power can reach 400W, with the band width of 125MHz to 512MHz, the frequency-power efficiency can reach 90%. It has excellent linear behavior, high linearity, high gain and wide voltage range.The applications include voice and data communication, air and satellite navigation systems, broadcast equipment, emitting devices, car computers, power amplifier, linear amplifier, etc.

Detailed Characteristics

Power Capacity: 400W P1dBFrequency: 125MHz - 512MHzVoltage Range: ±2V to ±80VPower Gain: 18.5 dB typ.Efficiency: >90% typ.Impedance: 50Ω (Input/Output)Max. Input Power: 28.5dBm P1dBMax. output Power: 44.8 dB P1dBSaturated Support: 50WThreshold Voltage: 17.4VTransistor Chart: 50V - NF/P1dB = 10.2/29.2dB 80V - NF/P1dB = 13.7/43.2dB

Working Principle

MRF7S38040HR3 is a N-channel enhancement-mode lateral diffused MOSFET which utilizes the LDMOS technology patented by Freescale. Its working principle is basically the same as the other MOSFETS.When the gate-source voltage (Vgs) is 0V, the drain-source voltage (Vds) is also 0V, and the MOSFET is considered to be open, and thus no current flows through the drain. However, when Vgs is sufficient to turn on the MOSFET, the flow of current through the drain is controlled by the gate-source voltage (Vgs).When gate-source voltage (Vgs) is higher than threshold voltage, that means the transistor is already in “saturation” mode. With further increase in the gate-source voltage (Vgs), the resistance between drain and source decreases, resulting in an increasing current flow through the drain. Therefore, the device works in linear region when the gate voltage is greater than the threshold voltage (Vth) and the current flow is controlled by the gate voltage.

Conclusion

MRF7S38040HR3 is a kind of RF power transistor which utilizes the LDMOS technology patented by Freescale. It is widely used in high frequency and high power application. With maximum value of output power up to 400W, the frequency-power efficiency can reach 90%. The device works in linear region when the gate voltage is greater than the threshold voltage (Vth) and the current flow is controlled by the gate voltage.

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