MRF7S38010HSR5

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MRF7S38010HSR5 is a RF power field effect transistor (FET) manufactured by Freescale Semiconductor, Inc. This MOSFET is part of their MRF7S family of devices and is designed for industrial, commercial and military wireless applications. The package style is surface-mountable and the transistor has a plastic case.

The device is specifically designed for increased power in high frequency applications, allowing for better efficiency, improved size and lower cost than traditional FETs. The MRF7S38010HSR5 is able to provide maximum power of 230W from a 50V supply and is able to operate from 890 MHz to 1020 MHz. The transistor also features a low gate cap of 23pF, enabling high frequency operation of up to 1020MHz for efficient RF power amplifiers.

The MRF7S38010HSR5 utilizes an N-Channel MOSFET technology meaning the source terminal is an N-Channel and the drain terminal is an N-Channel. This enables the device to switch quickly between two different voltages, allowing fast switching times with minimal power loss. The device also features an integrated gate-drain overlap protection circuit, helping to ensure that the gate is not overdriven and preventing device damage due to overcurrent.

The working principle behind the MRF7S38010HSR5 involves applying a voltage input to the gate terminal, which then causes a current to be flown from the source terminal to the drain terminal. This current flow is known as channel conductivity and is what allows the transistor to efficiently amplify the current from the source to the drain. The voltage input to the gate will determine the flow of current and the rate at which it will switch. The higher the voltage input is, the higher the current flow and the faster the switching time will be.

The MRF7S38010HSR5 has a range of applications including but not limited to: wireless base stations, wireless local loop (WLL) systems, point-to-multipoint radio technology and other high power wireless systems. This device is ideal for use in these types of applications due to its high power output, wide operating frequency range and fast switching times.

In conclusion, the MRF7S38010HSR5 is a highly efficient RF power FET, designed to provide increased power in high frequency applications. This device offers excellent performance with a wide operating frequency range, fast switching times and a low gate cap. With its integrated protection circuit, the transistor can be used safely and reliably in wireless applications such as wireless base stations and point-to-multipoint radio technology.

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