MRF7S38075HR5

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What Is MRF7S38075HR5?

MRF7S38075HR5 is an advanced radio frequency (RF) Gallium Arsenide (GaAs) laterally diffused metal oxide semiconductor field effect transistor (LDMOS FET). It is designed for use in cellular, wireless and satellite communication systems operating in frequency bands from 800 to 960 MHz.

Application Field

MRF7S38075HR5 mainly operate on a bias voltage of 6V and their total power dissipation varies from 3.9W to 6W. With their high power handling capabilities, they can be used in many applications such as amplifiers, RF drivers, switches and oscillators in all frequency bands up to 960 MHz. These devices are typically used in cellular, wireless and satellite communication systems operating in frequency bands from 800 to 960 MHz.

Working Principle

The MRF7S38075HR5 is a high performance GaAs LDMOSFET with bi-directional breakdown characteristics. It works on a principle wherein the device is p-channeled and its drain is connected to the source. A certain amount of voltage is applied to the gate which creates an electrostatic field around the source and drain. This electrostatic field changes the conductivity of the device and allows it to conduct current when there is an input signal.

This current flows from drain to source and it is then amplified due to a higher current gain and a higher transconductance. The higher transconductance and current gain is caused by the electrostatic field, which effectively boosts the signal power. The device’s high frequency operation feature also increases its performance at the higher frequency bands.

The device\'s versatility also facilitates its usage in different applications. The gate bias voltage can be fine-tuned to switch the device on/off and in this way, enhance the performance of circuits. The drain and source also have a wide overdrive voltage range allowing the RF power levels to be adjusted over a wide span. This ensures that the device can be used in a variety of applications that require varying levels of signal power.

Conclusion

MRF7S38075HR5 is an advanced RF Gallium Arsenide LDMOS FET device designed for use in cellular, wireless and satellite communication systems operating in frequency bands from 800 to 960 MHz. It provides enhanced signal power and is highly reliable, making it suitable for use in a wide range of applications. The device’s high frequency operation and adjustable gate bias voltage further increase its versatility, allowing it to be tailored to suit different application requirements.

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