MRF7S21170HSR3

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The MRF7S21170HSR3 is a negative-channel enhancement mode, symmetrical lateral N-channel, high power, gallium-nitride (GaN) field-effect transistor (FET) housed in industry-standard plastic packages. This device is designed for use in high-frequency applications, supporting signal levels up to 6 watts and frequencies from 300 MHz to 425 MHz. The device is designed for both direct,and harmonic, applications. It has a high-voltage breakdown which, in combination with its low on-resistance, makes it an ideal choice for high-power applications such as DC/DC converters, Voltage-Controlled Oscillators (VCOs) amplifiers and transmitters. Its low on-resistance, combined with a high-frequency capability, makes it suitable for RF power amplifiers.

The operation of the MRF7S21170HSR3 is based on the field effect principle. When a voltage is applied to the gate or "G" terminal, an electric field is created across the majority charge carriers, namely electrons, in the channel of the device. This field is known as the pinch-off voltage, or "Vpo". When the pinch-off voltage is exceeded, electrons get pulled up into the gate electrode, and the device becomes conductive with a low on-resistance.

The MRF7S21170HSR3 is ideally suited for use in many applications. It is particularly well-suited for use in high-frequency, high-power amplifiers and transmitters; DC/DC converters; Voltage-Controlled Oscillators (VCO); and amplifiers. In addition, it can also be used in low-noise amplifiers; low-input and power amplifiers; power supplies; and communication systems.

The device features a very low on-resistance which enables it to operate at high frequencies and high power levels. In addition, it has a low gate-threshold voltage, which means that it can be easily switched. The gate-threshold voltage is the level of the applied gate voltage at which the device starts to conduct current. This device also features a high-voltage breakdown, which, in combination with its low on-resistance, makes it an ideal choice for high-power applications.

The MRF7S21170HSR3 is also designed to minimize the switching losses that tend to accumulate in high-frequency, high-power applications. This is achieved by optimizing the device for switching applications. The device also features a low amount of thermal resistance, which helps to ensure that the heat generated by the device is effectively dissipated from the die, thus helping to improve the overall reliability and performance of the device.

The MRF7S21170HSR3 is an ideal choice for high-power, high-frequency applications. Its low on-resistance, together with its high breakdown voltage, ensures that it can handle high-frequency signals with excellent performance. Its low thermal resistance also ensures that the device does not suffer from excessive heat accumulation. In addition, the device’s low gate-threshold voltage enables it to be easily switched on and off.

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