NSBA123JDXV6T1G Allicdata Electronics

NSBA123JDXV6T1G Discrete Semiconductor Products

Allicdata Part #:

NSBA123JDXV6T1GOSTR-ND

Manufacturer Part#:

NSBA123JDXV6T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.5W SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: NSBA123JDXV6T1G datasheetNSBA123JDXV6T1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Base Part Number: NSBA1*
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 500mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NSBA123JDXV6T1G is part of a family of transistors and arrays suited for the needs of pre-biased applications. This type of device contains both NPN and PNP transistors which provide low-noise and reduced distortion that is suitable for voltage amplifiers. The NSBA123JDXV6T1G comprises of two separate monolithic integrated NPN and PNP transistors in one package, featuring high common mode rejection, high input impedance and high current drive capability.

The device offers several features and benefits. The transistors are factory matched, so pre-biased applications need less control and adjustment for precision operation, making them ideal for cost-sensitive and multi-functional applications. The wide common mode range of the NSBA123JDXV6T1G makes it possible to directly operate with unipolar signals and low-impedance sources. The package is also offered with integrated transient protection, making it easy to use and install.

The NSBA123JDXV6T1G is suitable as a direct replacement for conventional discrete transistor pair circuits and emitter-coupled differential pairs. It is also ideal for applications requiring increased accuracy and noise performance, such as temperature measuring devices and electromechanical controls.

The NSBA123JDXV6T1G is designed for differential voltage amplification and is ideal for applications where high-frequency signals need to be converted to low-frequency signals with minimal noise and distortion. One example is multi-stage voltage amplifiers, where multiple stages are incorporated into a single chip with low noise and high linearity, allowing for easier and faster development and production.

The working principle of the NSBA123JDXV6T1G is based on the simple amplification and filtering of differential voltage signals. The differential voltage is applied to the NPN transistor, and the PNP transistor amplifies and conditions the output signal. The positive and negative signals are recombined, resulting in single-ended or balanced outputs. This device also offers excellent linearity and low offset, allowing for the amplification and development of complex signals with precision and accuracy.

The NSBA123JDXV6T1G has a wide range of applications in the fields of industrial and consumer electronics, audio, video and broadcast, automotive, medical and instrumentation, telecom, and many other technology fields. They are designed for demanding processes where precise voltage signals are required to control various components, systems and devices.

The specific data is subject to PDF, and the above content is for reference

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