NTD60N02R-035 Allicdata Electronics
Allicdata Part #:

NTD60N02R-035-ND

Manufacturer Part#:

NTD60N02R-035

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 25V 8.5A IPAK
More Detail: N-Channel 25V 8.5A (Ta), 32A (Tc) 1.25W (Ta), 58W ...
DataSheet: NTD60N02R-035 datasheetNTD60N02R-035 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 58W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NTD60N02R-035 is a small-package, low cost, enhancement-mode power field-effect transistor (FET) featuring fast switching capabilities, low Crss and low on-resistance. The FET is housed in a standard SOT-23 package and comes with an internal source-drain diode, providing optimal performance in most applications. The NTD60N02R-035 is widely used in a variety of applications, including low-noise and low-impedance switching and audio applications.

The NTD60N02R-035 is an enhancement-mode FET, which is typically used in most circuits. The FET is constructed with a source, gate, and drain. When a positive voltage is applied to the gate, a channel is created between the source and drain and the current flows across the FET. At the same time, the drain-source voltage is reduced, allowing more current to pass through. The NTD60N02R-035 is a compact, low cost device capable of withstanding up to 10A of drain current.

It also features an ultra-low on-resistance, providing faster switching times than conventional FETs as well as superior power efficiency and lower power dissipation. As well as low on-resistance and fast switching speed, the NTD60N02R-035 also features low input capacitance, leading to minimal latency and improved signal speed. The FET also features low stray inductance, ensuring stable operation and minimized frequency-dependent losses.

The FET can be used in a variety of different applications including power supplies, motor controls, lighting controls, audio systems, and aerospace and communication systems. The FET is also suitable for switching applications where a low on-resistance and fast switching times are needed. Additionally, due to the low gate capacitance and its fast switching time, it is ideal for use in high-frequency switching applications.

The NTD60N02R-035 is a versatile and reliable device, capable of withstanding up to 10A of continuous drain current. With its fast switching times and low on-resistance features, as well as its low gate capacitance, it is suitable for a wide range of applications requiring fast, reliable and power-efficient switching.

The specific data is subject to PDF, and the above content is for reference

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