| Allicdata Part #: | NTD60N02R-035-ND |
| Manufacturer Part#: |
NTD60N02R-035 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 25V 8.5A IPAK |
| More Detail: | N-Channel 25V 8.5A (Ta), 32A (Tc) 1.25W (Ta), 58W ... |
| DataSheet: | NTD60N02R-035 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-251-3 Stub Leads, IPak |
| Supplier Device Package: | I-PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1.25W (Ta), 58W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1330pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.5A (Ta), 32A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The NTD60N02R-035 is a small-package, low cost, enhancement-mode power field-effect transistor (FET) featuring fast switching capabilities, low Crss and low on-resistance. The FET is housed in a standard SOT-23 package and comes with an internal source-drain diode, providing optimal performance in most applications. The NTD60N02R-035 is widely used in a variety of applications, including low-noise and low-impedance switching and audio applications.
The NTD60N02R-035 is an enhancement-mode FET, which is typically used in most circuits. The FET is constructed with a source, gate, and drain. When a positive voltage is applied to the gate, a channel is created between the source and drain and the current flows across the FET. At the same time, the drain-source voltage is reduced, allowing more current to pass through. The NTD60N02R-035 is a compact, low cost device capable of withstanding up to 10A of drain current.
It also features an ultra-low on-resistance, providing faster switching times than conventional FETs as well as superior power efficiency and lower power dissipation. As well as low on-resistance and fast switching speed, the NTD60N02R-035 also features low input capacitance, leading to minimal latency and improved signal speed. The FET also features low stray inductance, ensuring stable operation and minimized frequency-dependent losses.
The FET can be used in a variety of different applications including power supplies, motor controls, lighting controls, audio systems, and aerospace and communication systems. The FET is also suitable for switching applications where a low on-resistance and fast switching times are needed. Additionally, due to the low gate capacitance and its fast switching time, it is ideal for use in high-frequency switching applications.
The NTD60N02R-035 is a versatile and reliable device, capable of withstanding up to 10A of continuous drain current. With its fast switching times and low on-resistance features, as well as its low gate capacitance, it is suitable for a wide range of applications requiring fast, reliable and power-efficient switching.
The specific data is subject to PDF, and the above content is for reference
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NTD60N02R-035 Datasheet/PDF