NTD6600NT4 Allicdata Electronics
Allicdata Part #:

NTD6600NT4-ND

Manufacturer Part#:

NTD6600NT4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 12A DPAK
More Detail: N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Sur...
DataSheet: NTD6600NT4 datasheetNTD6600NT4 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 146 mOhm @ 6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTD6600NT4 is a single-pole, field effect transistor (FET) with a high-power threshold voltage version of MOSFET technology. It is used in a wide range of applications, ranging from low-power, general-purpose electronics to high-power, high-speed systems. Its characteristics, such as its low input impedance and high current drain, make it an ideal choice for many applications. Here, we will explain the NTD6600NT4 application field and working principle.

Application Field: The NTD6600NT4 is commonly used in various electronic systems, including power, audio, and video. It is also used in automotive and telecommunications applications. Its wide temperature range allows it to be used in extreme temperatures, such as in automobiles and aircraft. Its high-power characteristics make it suitable for high-speed systems, such as computer switching systems and telecommunications. The NTD6600NT4 is also widely used in consumer electronics, such as digital television, mobile phones, and computers.

Working Principle: The NTD6600NT4 works on a principle of “depletion-mode.” When the gate voltage is low, current can flow through the device. When the gate voltage is higher, current cannot flow. Furthermore, the voltage level at which current can start to flow can be adjusted by changing the gate voltage. This makes it an ideal transistor for application in high-power circuits.

The NTD6600NT4 is a N-channel FET, meaning that it uses a negative-type gate voltage to control the current through the device. This enables the device to operate at high drain currents with low gate voltage. It also has a relatively low input capacitance when compared to other FETs, making it suitable for high switching speeds. Additionally, the device\'s low input impedance means that it does not consume large amounts of power, making it an attractive choice for battery-powered applications.

The NTD6600NT4 offers excellent switching characteristics, making it ideal for use in various power, audio, and video applications. Its high-speed switching capabilities make it ideal for applications that require fast response times and low voltages. Furthermore, its low power consumption and low input capacitance enable it to operate at high current levels while consuming only minimal amounts of power.

The NTD6600NT4 is also suitable for use in very high power applications, as its high current drain capability allows it to be used in high-voltage circuits. Its low input impedance allows it to be used to drive large loads, such as motors and solenoids, with minimal power consumption. Furthermore, its low input capacitance makes it ideal for high-speed switching in a wide range of electronic systems.

The NTD6600NT4 is an incredibly versatile single-pole, field effect transistor that can be used in a wide range of applications. Its low power consumption, high current drain, and low input capacitance make it an attractive choice for many power, audio, and video applications. It is also suitable for use in extreme temperatures and in high-power systems.

The specific data is subject to PDF, and the above content is for reference

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