
NTD6416ANLT4G Discrete Semiconductor Products |
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Allicdata Part #: | NTD6416ANLT4GOSTR-ND |
Manufacturer Part#: |
NTD6416ANLT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 19A DPAK |
More Detail: | N-Channel 100V 19A (Tc) 71W (Tc) Surface Mount DPA... |
DataSheet: | ![]() |
Quantity: | 5000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 74 mOhm @ 19A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NTD6416ANLT4G is a single N-channel Power MOSFET. It is designed for high-reliability and temperature operation up to 175°C.
As a power MOSFET, NTD6416ANLT4G provides excellent performance in either high side or low side switching applications. Its superior avalanche capabilities allow it to be used in high voltage, high speed switch mode power applications. Its operational temperature range makes it suitable for automotive, telecom and industrial applications.
Application Field
NTD6416ANLT4G is applicable in the high and low side switching applications, such as high voltage, high speed switch mode power applications, automotive, telecom and industrial applications. It is suitable for use in switching power supplies, motor control, lighting, battery management, and other applications.
Working Principle
NTD6416ANLT4G is made up of two types of transistors, N-channel and P-channel. The transistors are connected to each other via a channel. The N-channel is controlled by a gate voltage, the P-channel by a drain voltage. When a voltage is applied to the gate of the N-channel, it turns on and a current can flow between the source and drain, resulting in a drain-source current that can be pinched off by adjusting the gate-source voltage.
The NTD6416ANLT4G Power MOSFET has an efficient structure that allows it to handle large power loads due to the high transconductance between the gate and drain (Vgs). When a voltage is applied to the gate, it opens and allows a current to flow between the source and drain. The current flow is regulated by the gate voltage (Vgs). By controlling the gate voltage, the amount of current flowing between the source and drain can be adjusted. As the voltage increases, the current flow increases and, as the voltage decreases, the current flow decreases.
The NTD6416ANLT4G Power MOSFET is a rugged device, providing excellent performance in high reliability and temperature applications. It has a high thermal resistance and is designed to operate from -55°C to 175°C. The Power MOSFET has low gate capacitance, allowing it to switch faster than conventional power MOSFETs.
The NTD6416ANLT4G Power MOSFET is perfect for power management applications, such as motor control and lighting, as it provides efficient operation and is suitable for both high side and low side switching applications. Its features make it ideal for automotive, telecom and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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