| Allicdata Part #: | NTD6600N-001-ND |
| Manufacturer Part#: |
NTD6600N-001 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 12A IPAK |
| More Detail: | N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Thr... |
| DataSheet: | NTD6600N-001 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1.28W (Ta), 56.6W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 146 mOhm @ 6A, 5V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The NTD6600N-001 is the newest offering in a range of high-performance, versatile MOSFET transistors from NTElectronics. The NTD6600N-001 features an all-in-one package for a wide range of applications. With its high-current and high-voltage capabilities, this MOSFET has applications in high-performance power conversion and switching applications, as well as in industrial and consumer applications.
The NTD6600N-001 is a single, enhancement-mode, field-effect transistor with excellent characteristics. It has a gate-to-drain breakdown voltage rating of 500V and a drain-to-source breakdown voltage of 600V. It also has a low threshold voltage of 2V and a high current rating of 2.5A. In addition, its high input impedance of 10 11 ohm and maximum output impedance of 3.2K ohm make it an ideal choice for high-speed switching applications.
The NTD6600N-001 offers high efficiency and reliability in its operation. It is designed for maximum drain-to-source voltage ratings with low dissipated power during operation. The device is well suited for low-power switch-mode power supply designs and very low on-resistance losses. It is also well-suited to high-efficiency, high-temperature applications like power MOSFETs and RF power MOSFETs.
The working principle of the NTD6600N-001 is based on the physics of electric fields. The device is equipped with two terminals, source and drain. When a source-drain voltage is applied between the two terminals, it creates an electric field that channels an electric current through the channel. The amount of current conducted depends on the amount of voltage applied between the source and drain.
The NTD6600N-001 is well suited to high-power applications, such as high-power switch-mode power supplies, DC-DC converters, and motor speed control. Other applications include in telecommunications, digital logic, analog circuits, and computer systems. It is also suitable for use in automotive, aerospace, industrial, and medical applications.
Overall, the NTD6600N-001 offers an excellent combination of performance, reliability, and efficiency. Its combination of high current, voltage, and input and output impedance make it a popular choice for industrial and high-power applications. The NTD6600N-001 is an ideal choice for applications where performance and reliability are paramount.
The specific data is subject to PDF, and the above content is for reference
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NTD6600N-001 Datasheet/PDF