
Allicdata Part #: | NTD60N02R-1G-ND |
Manufacturer Part#: |
NTD60N02R-1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 8.5A IPAK |
More Detail: | N-Channel 25V 8.5A (Ta), 32A (Tc) 1.25W (Ta), 58W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta), 58W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1330pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A (Ta), 32A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTD60N02R-1G is a 60V N-Channel MOSFET (metal-oxide semiconductor field-effect transistor). This particular model is an enhancement mode MOSFET, meaning it is turned on when a small electrical current is passed through the gate. It is widely used in digital and analog electronic devices, due to its low power consumption and ability to handle high current.
Application field
The NTD60N02R-1G is commonly used in power conversion circuits, voltage regulators, and motor speed controllers. It is also often utilized in audio amplifiers and switch mode power supplies, as well as in power management applications. The MOSFET is also often used for light dimming and smart lighting applications due to its ability to work with small signals and low voltage.
This particular model has a low “on-state” resistance, which helps it conserve energy in power conversion applications. It also comes with a 60V drain-source voltage rating, and is capable of handling up to 100 amps of continuous current. The device has an industry-standard 3-pin package, making it easy to integrate into existing circuitry.
Working principle
MOSFETs work by using two metallic oxide layers to separate the source and drain terminals from the gate terminal. When a small electrical current is passed through the gate, it creates an electric field that draws electrons from the source to the drain, creating an electrical pathway. This effect is known as “pancake effect”.
The amount of current that can flow through the device is directly proportional to the voltage applied to the gate. This allows the device to be used to control the amount of current that is passed through it. This feature makes them ideal for use in circuits where power needs to be regulated in order to protect components or conserve energy.
One of the main advantages of the NTD60N02R-1G is its low RDS(on), which is the “on-state” resistance of the MOSFET. This is important because the lower the RDS(on) is, the less power is dissipated when the MOSFET is in its “on” state. This can help reduce the amount of energy used in an application, and can also help to protect components from damage caused by excessive heat.
The NTD60N02R-1G is a versatile and reliable transistor. Its low power consumption and high current capabilities make it a great choice for a wide variety of applications. Its 3-pin package makes it easy to integrate into existing circuitry, and its low RDS(on) helps to conserve energy and protect components. All of these features make it a popular choice for many manufacturers.
The specific data is subject to PDF, and the above content is for reference
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