NTD6414AN-1G

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The NTD6414AN-1G belongs to the transistors-FETs, MOSFETs-Single category. It has a wide range of applications, and its working principle is fairly straightforward. That makes it a great choice for many projects.

This FET is a single channel n-type metal oxide semiconductor (MOSFET). It has a maximum drain current of 64 A and a maximum drain voltage of 60 V. The thermal impedance is low and the maximum power dissipation is 5 W. Moreover, it has an exceptional drain–source on-state resistance per ampere so there is no need for a voltage regulator for the gate voltage.

The NTD6414AN-1G is primarily designed for use in automotive and power conversion applications. It has robust switching features, low on-resistance, and high strength which makes it an ideal choice for automotive power electronics applications such as SMPSs and voltage regulators. The low resistance helps in reducing heat generation which means it can be used in power conversion systems with a high efficiency.

The NTD6414AN-1G also has advanced Gate Charge technology that allows for higher efficiency, extended operating temperature range and longer product life. This technology increases FET switching speeds and reduces contact resistance, allowing for better current handling and improved thermal performance. In addition to that, the NTD6414AN-1G features an advanced die construction for improved reliability and performance.

As for the working principle, NTD6414AN-1G uses a field-effect transistor (FET) to control current through a channel between its source and drain. The voltage applied across the gate and the source (Vgs) determines the current that flows between the source and the drain. When the gate-source voltage is above a certain threshold, the FET will conduct current across the channel and when the voltage is below the threshold, the FET will be off and no current will flow.

In general, the NTD6414AN-1G is a reliable high power MOSFET used in many automotive and power conversion applications. Due to its low thermal impedance and exceptional high drain–source on-state resistance per ampere, it is capable of providing high efficiency and reliable performance even under extreme environmental conditions. The advanced gate charge technology also allows for improved switching speed and thermal performance, making it ideal for power conversion systems.

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