NTD6415ANT4G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	700pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	29nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	55 mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	23A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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NTD6415ANT4G is an advanced power MOSFET, which provides higher performance and better reliability than conventional field effect transistors (FETs). Its unique design and working principle make it suitable for a variety of applications. In this article, we will discuss the application field and working principle of the NTD6415ANT4G.The NTD6415ANT4G is a power MOSFET designed for use in high-voltage digital and analog circuit applications. It features a superior breakdown voltage of up to 60V and continuous drain current capability of up to 14A. It also features an enhanced process, which results in improved thermal and electrical characteristics. This enables the device to provide excellent performance even at high switching speeds.The NTD6415ANT4G is ideal for use in automotive, industrial, and consumer electronic applications. Its superior breakdown voltage, high drain current capability, and improved thermal and electrical characteristics make it ideal for use in automotive motion control, automotive sound systems, industrial motor control, and industrial power control applications. It is also suitable for use in lighting, audio, home appliances, and household appliance controllers.The working principle of the NTD6415ANT4G is based on the "depletion mode" of operation. This mode of operation utilizes a reverse-biased gate-to-source junction, which acts as a rectifier, allowing only positive voltage (VGS) to pass through and to activate the device. The source-to-drain operation of the device is then determined by the applied voltage, VDS.When the NTD6415ANT4G is activated, the voltage applied across the source-to-drain terminals, VDS, determines the amount of current that can flow through the device. As the voltage applied across the drain-source terminals increases, more current can flow through the device. When the VDS reaches the breakdown voltage, the device is switched off, preventing the circuit from exceeding the maximum current.The NTD6415ANT4G is an essential component in modern digital and analog circuit designs. It is able to provide reliable performance and higher power handling capabilities than conventional FETs. Its unique design and working principle make it suitable for a variety of applications. It is ideal for use in automotive, industrial, and consumer electronic circuits, providing improved current and voltage performance.

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