NTD6416ANT4G Allicdata Electronics
Allicdata Part #:

NTD6416ANT4GOSTR-ND

Manufacturer Part#:

NTD6416ANT4G

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 17A DPAK
More Detail: N-Channel 100V 17A (Tc) 71W (Tc) Surface Mount DPA...
DataSheet: NTD6416ANT4G datasheetNTD6416ANT4G Datasheet/PDF
Quantity: 5000
2500 +: $ 0.25662
Stock 5000Can Ship Immediately
$ 0.29
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 71W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 81 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Transistors are one of the most commonly used semiconductor devices. They are responsible for relaying electrical signals from one circuit to another. Transistors are also known to assist in amplifying, switching and attenuating signals. Transistors are divided into two main categories; FETs (Field Effect Transistors) and BJTs (Bipolar Junction transistors). FETs include one of the most widely used transistors today, the Metal Oxide Semiconductor Field Effect Transistor (MOSFET).

The NTD6416ANT4G is a special type of MOSFET with many advantages. It is a small, low cost dual N-Channel enhancement mode MOSFET made using an advanced trench technology. This device is ideal for use as a power switch for many different applications. Due to its small size and low cost, the NTD6416ANT4G can be incorporated into many cost-sensitive applications such as power supplies, converters, and portable electronics.

The main feature of the NTD6416ANT4G is its enhanced electrical characteristics. It has a low total gate charge, extremely low ON-resistance, and fast switching speed. Its low total gate charge enables the device to switch at high speeds, which makes it highly suitable for high-frequency switching applications. The device also has a low ON-resistance, which makes it capable of delivering high current with minimal voltage drop.

The NTD6416ANT4G’s working principle is based on the fact that it is an enhancement-mode transistor. This means that bipolar current can flow smoothly through the device when a positive voltage is applied to the gate terminal. It also means that the device can be used as a switch to control the flow of current between two points. The main benefit of the NTD6416ANT4G is that it can switch quickly between on and off states without the need for any other components.

The NTD6416ANT4G can be used in many different applications such as consumer electronics, power supplies, and LCD displays. It is also suitable for automotive applications as it plays an important role in controlling the power flow. The device is also capable of operating in high-temperature environments due to its strong immunity to radiation. This makes it highly suitable for lighting, motor control, and renewable energy applications.

In conclusion, the NTD6416ANT4G is an effective and efficient dual N-Channel enhancement mode MOSFET. It is capable of providing high frequency switching due to its low total gate charge, low on-resistance, and fast switching speed. The device is highly suitable for use in many different applications such as consumer electronics, power supplies, automotive, lighting, motor control, and renewable energy applications.

The specific data is subject to PDF, and the above content is for reference

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