| Allicdata Part #: | NTD6415AN-1GOS-ND |
| Manufacturer Part#: |
NTD6415AN-1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 23A IPAK |
| More Detail: | N-Channel 100V 23A (Tc) 83W (Tc) Through Hole I-PA... |
| DataSheet: |  NTD6415AN-1G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 83W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 55 mOhm @ 23A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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NTD6415AN-1G is a high voltage enhancement mode N-Channel Power MOSFET with a maximum drain to source voltage of 100V. This is a high performance MOSFET that is mainly suitable for switch mode power supply (SMPS) systems and battery management systems. NTD6415AN-1G can operate at a very low resistance and can handle high current loads with very low switch-off times.
NTMD6415 AN-1G application field mainly includes switching regulator, lighting and display system, automotive, industrial and telecom systems. Furthermore, the NTD6415AN-1G can also be used in applications such as electronic control units, transistor inverters, DC/DC converters, solar inverters, battery chargers and more.
The working principle of the NTD6415AN-1G is based on the enhancement mode of its power MOSFET. The main function of the power MOSFET is to act as a switch controlled by an electrical signal. This can be achieved by applying a voltage or current to the gate terminal of the MOSFET, which will then result in the electrical current being switched on or off depending on the voltage value. The NTD6415AN-1G is capable of operating with very low gate thresholds, which makes it ideal for applications with medium frequency switching.
In terms of electrical characteristics, the NTD6415AN-1G has a very low gate threshold, a maximum on-state resistance of 0.0014 Ohms, an input capacitance of 28pF and a maximum drain to source voltage of 100V. This makes it suitable for a wide range of applications due to its low switching loss and high reliability.
NTD6415AN-1G is a very useful MOSFET for a wide range of applications, from switch mode power supplies to automotive electronics. It has a low on-state resistance and can handle high current loads with very low switch-off times. It has a maximum drain to source voltage of 100V, making it suitable for high voltage applications. The NTD6415AN-1G is based on the enhancement mode of the MOSFET and is capable of operating with very low gate thresholds, which makes it ideal for medium frequency switching.
The specific data is subject to PDF, and the above content is for reference
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