| Allicdata Part #: | NTD65N03RT4-ND |
| Manufacturer Part#: |
NTD65N03RT4 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 25V 9.5A DPAK |
| More Detail: | N-Channel 25V 9.5A (Ta), 32A (Tc) 1.3W (Ta), 50W (... |
| DataSheet: | NTD65N03RT4 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1.3W (Ta), 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 8.4 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9.5A (Ta), 32A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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NTD65N03RT4 application field and working principle
NTD65N03RT4 is a Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is commonly used in the building of electrical components and has a vast range of applications. It is one of the most reliable power MOSFETs available on the market, and can be used in both commercial and industrial projects. This article will briefly explain the application field and working principle of this MOSFET in order to provide an understanding for those who may use or come across these components.
Application Field
The NTD65N03RT4 Power MOSFET is commonly used in the power supplies of devices such as computers, cell phones, and electronics that have to meet safety and performance standards. It is also suitable for a variety of applications including those requiring fast switching or protection from overvoltages and current surges. Additionally, NTD65N03RT4 can be used in DC-DC converters and high power audio amplifiers. It can operate with a wide gate voltage range of -20V to +20V, with no secondary breakdowns.
Working Principle
The NTD65N03RT4 Power MOSFET is based on the functioning of electrostatic principles. It is built with a gate region that is isolated from a drain region on the substrate material which make up the bulk. This gate region is what controls the current flow of electrons through the device and is operated with an external signal source such as voltage. When the gate region receives a voltage, it forms an electric field that induces current by “pushing” the electrons. This is known as the operation of the transistor.
In the particular case of NTD65N03RT4 Power MOSFETs, they are operated by providing a drain-to-source resistance that is controlled by the gate-to-source voltage. This is called the transfer characteristic of the Power MOSFET which makes it function as a switch or amplifier. This principle is what is employed in order to operate the transistor in applications such as DC-DC converters or power supplies. As such, it can serve as a simple switch for various load currents.
Conclusion
The NTD65N03RT4 Power MOSFET is a reliable transistor that is commonly used in a variety of application fields. Its transfer characteristic enables it to serve as a switch, providing a stable and reliable current flow for any type of device. It is highly reliable and can be used in consumer and industrial projects alike. Its operability is based on electrostatic principles, involving the gate and drain regions, and can be controlled by an external voltage source.
The specific data is subject to PDF, and the above content is for reference
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NTD65N03RT4 Datasheet/PDF