Allicdata Part #: | NTD6416AN-1GOS-ND |
Manufacturer Part#: |
NTD6416AN-1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 17A IPAK |
More Detail: | N-Channel 100V 17A (Tc) 71W (Tc) Through Hole I-PA... |
DataSheet: | NTD6416AN-1G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 620pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 81 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NTD6416AN-1G is a single field-effect transistor (FET), typically used in low voltage applications. It is often used in power switch applications that require very low power losses and is a popular choice for many different types of components.
The NTD6416AN-1G FET is a four-pin device with a top-gate structure. It is composed of a source, a drain and control gate. The NTD6416AN-1G is an enhancement-mode (normally-off) MOSFET, meaning that the current flow through the device is usually blocked until a voltage is applied to the gate. The small amount of gate current that is required to turn the device on is what makes the NTD6416AN-1G so efficient at low voltage operations.
The NTD6416AN-1G is a low-voltage FET device typically used in low power circuit designs, such as automotive and industrial applications. The operating voltages for the drain current are very low, typically being around 2.5V. This makes it an ideal device for automotive circuits, where a 5V or 12V interface could cause an issue. The device also has a low on-resistance, making it suitable for applications where a low voltage drop is desired.
The NTD6416AN-1G is particularly suitable for switch control and DC-DC buck converter applications. It is easy to integrate into the main power circuit design and is quite reliable, with a long operating life.
The device has a typical drain-source on-resistance of 41.5mΩ and a maximum drain current of 12.5A. It has a low gate threshold voltage of 1.8V and a maximum power dissipation of 12.5W at 25°C. This makes it suitable for high-current applications, as it can handle large currents without the risk of thermal runaway.
The device can be used in a number of low-voltage applications, such as battery-powered systems and automotive starters. It is ideal for automotive applications, as it has a low gate voltage and is capable of carrying large amounts of current without the risk of thermal runaway. The on-resistance of the device also makes it ideal for switch control and DC-DC buck converter applications as it ensures minimal power loss in the circuit.
In summary, the NTD6416AN-1G is a low-voltage FET device that is designed for low power applications. It is often used for switch control and other low voltage applications that require minimal power losses. It provides a low gate voltage and a low on-resistance, making it suitable for high-current applications. Despite its low power, the device can still handle large amounts of current, making it a reliable and ideal solution for many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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