NTD60N02RT4 Discrete Semiconductor Products

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A NTD60N02RT4 is a vertical double diffused N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). This type of transistor is useful for providing high-power handling capabilities, as well as its ability to handle large currents and voltages. As its name implies, this type of transistor has two diffused layers of oxide on it. These layers are deposited on the surface of the substrate, using a chemical vapor deposition (CVD) process.

The NTD60N02RT4 has a breakdown voltage of 60V. This high voltage allows it to provide protection against overvoltage as well as high-current applications. In addition, its high drain-source breakdown voltage makes it suitable for use in high-voltage applications. Furthermore, its low RDS(on) and gate drive requirements make the NTD60N02RT4 an effective choice for power management solutions.

The NTD60N02RT4 is also a low-threshold type of transistor. This means that it can be used to switch on/off electrical signals which require a low voltage and current. This type of transistor is ideal for applications requiring low power and high output voltage and current. Furthermore, it can also be used in audio circuits, as it has low local noise levels.

In terms of operation, the NTD60N02RT4 is an enhancement-mode device. This means that the device operates based on the applied gate-to-source voltage (VGS). When the VGS is between 0 and VTH, the device is off. However, when the VGS exceeds VTH, the device begins to conduct current and the device turns on. The magnitude of the current and the device\'s on resistance (RDS(on)) will depend on the amount of current and the magnitude of the applied VGS.

The NTD60N02RT4 is suitable for use in various applications such as power management, switching, and audio applications. In terms of power management, it can be used to switch high currents and voltages, as well as provide protection against overvoltage and overcurrent. Furthermore, its low RDS(on) and high threshold voltage make it ideal for switching circuits requiring high efficiency. When used in audio applications, the NTD60N02RT4 provides low noise and signals with low distortion levels.

In conclusion, the NTD60N02RT4 is a vertical double-diffused N-Channel MOSFET. It has a breakdown voltage of 60V and a low threshold voltage. Furthermore, its low RDS(on) and high breakdown voltage make it suitable for use in high-current, high-voltage applications. Additionally, it is also suitable for applications requiring low power, high efficiency, and low noise levels.

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