NTD6414ANT4G Discrete Semiconductor Products |
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| Allicdata Part #: | NTD6414ANT4GOSTR-ND |
| Manufacturer Part#: |
NTD6414ANT4G |
| Price: | $ 0.44 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 32A DPAK |
| More Detail: | N-Channel 100V 32A (Tc) 100W (Tc) Surface Mount DP... |
| DataSheet: | NTD6414ANT4G Datasheet/PDF |
| Quantity: | 2500 |
| 1 +: | $ 0.44000 |
| 10 +: | $ 0.42680 |
| 100 +: | $ 0.41800 |
| 1000 +: | $ 0.40920 |
| 10000 +: | $ 0.39600 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 100W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1450pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 37 mOhm @ 32A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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Transistors – FETs, MOSFETs – Single
NTD6414ANT4G is a single, enhancement-mode, MOSFET with all n-channel, huge current flow and a maximum drain-source breakdown of ±20V. It is aimed at cost-optimized consumer applications such as PDAs, Portables and Home Theater, with very low input capacitance and high frequency. The NTD6414ANT4G device is a high-performance MOSFET that combines excellent on-resistance, efficient gate charge and a very threshold voltage with very low input capacitance, achieving superior power control for consumer applications. It is well suited for a wide range of markets, including consumer products such as PDAs, Portables and Home Theater.
The NTD6414ANT4G is primarily used in applications where low on-resistance, fast switching speed, and low gate charge are critical. These applications include high frequency DC-DC conversion, bluetooth headsets, cellular phones, portable devices, power management and higher frequency switching regulation. It offers excellent DC-DC performance for consumer applications, low on-resistance, fast switching speed and low gate charge.
The working principle of the NTD6414ANT4G is very simple. It is a single, enhancement-mode MOSFET with an n-channel and a maximum drain-source breakdown of ±20V. It works by applying a voltage between the drain and the source, which in turn creates an electric field that allows current to flow from the source to the drain. This in turn allows the device to act as a switch, regulating the current flow of the circuit. The device can also be used for other applications such as voltage or low-noise amplifiers.
The NTD6414ANT4G has many advantages over traditional MOSFETs. It offers very low input capacitance, which allows for faster switching speeds and high frequency operation. It also offers a high breakdown voltage, higher current density, higher temperature operation and improved gate charge. Additionally, the NTD6414ANT4G device offers excellent DC-DC performance for consumer applications, low on-resistance, fast switching speed and low gate charge.
The NTD6414ANT4G is an ideal device for cost-optimized consumer applications. It offers excellent power control for consumer applications and is well suited for a wide range of markets, including consumer products such as PDAs, Portables and Home Theater. It is also suitable for use in high frequency DC-DC conversion, bluetooth headsets, cellular phones, portable devices, power management and higher frequency switching regulation.
The specific data is subject to PDF, and the above content is for reference
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NTD6414ANT4G Datasheet/PDF