NTD6414ANT4G Allicdata Electronics

NTD6414ANT4G Discrete Semiconductor Products

Allicdata Part #:

NTD6414ANT4GOSTR-ND

Manufacturer Part#:

NTD6414ANT4G

Price: $ 0.44
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 32A DPAK
More Detail: N-Channel 100V 32A (Tc) 100W (Tc) Surface Mount DP...
DataSheet: NTD6414ANT4G datasheetNTD6414ANT4G Datasheet/PDF
Quantity: 2500
1 +: $ 0.44000
10 +: $ 0.42680
100 +: $ 0.41800
1000 +: $ 0.40920
10000 +: $ 0.39600
Stock 2500Can Ship Immediately
$ 0.44
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 37 mOhm @ 32A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Transistors – FETs, MOSFETs – Single

NTD6414ANT4G is a single, enhancement-mode, MOSFET with all n-channel, huge current flow and a maximum drain-source breakdown of ±20V. It is aimed at cost-optimized consumer applications such as PDAs, Portables and Home Theater, with very low input capacitance and high frequency. The NTD6414ANT4G device is a high-performance MOSFET that combines excellent on-resistance, efficient gate charge and a very threshold voltage with very low input capacitance, achieving superior power control for consumer applications. It is well suited for a wide range of markets, including consumer products such as PDAs, Portables and Home Theater.

The NTD6414ANT4G is primarily used in applications where low on-resistance, fast switching speed, and low gate charge are critical. These applications include high frequency DC-DC conversion, bluetooth headsets, cellular phones, portable devices, power management and higher frequency switching regulation. It offers excellent DC-DC performance for consumer applications, low on-resistance, fast switching speed and low gate charge.

The working principle of the NTD6414ANT4G is very simple. It is a single, enhancement-mode MOSFET with an n-channel and a maximum drain-source breakdown of ±20V. It works by applying a voltage between the drain and the source, which in turn creates an electric field that allows current to flow from the source to the drain. This in turn allows the device to act as a switch, regulating the current flow of the circuit. The device can also be used for other applications such as voltage or low-noise amplifiers.

The NTD6414ANT4G has many advantages over traditional MOSFETs. It offers very low input capacitance, which allows for faster switching speeds and high frequency operation. It also offers a high breakdown voltage, higher current density, higher temperature operation and improved gate charge. Additionally, the NTD6414ANT4G device offers excellent DC-DC performance for consumer applications, low on-resistance, fast switching speed and low gate charge.

The NTD6414ANT4G is an ideal device for cost-optimized consumer applications. It offers excellent power control for consumer applications and is well suited for a wide range of markets, including consumer products such as PDAs, Portables and Home Theater. It is also suitable for use in high frequency DC-DC conversion, bluetooth headsets, cellular phones, portable devices, power management and higher frequency switching regulation.

The specific data is subject to PDF, and the above content is for reference

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