NTD60N02RT4G Discrete Semiconductor Products |
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Allicdata Part #: | NTD60N02RT4GOSTR-ND |
Manufacturer Part#: |
NTD60N02RT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 8.5A DPAK |
More Detail: | N-Channel 25V 8.5A (Ta), 32A (Tc) 1.25W (Ta), 58W ... |
DataSheet: | NTD60N02RT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta), 58W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1330pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A (Ta), 32A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTD60N02RT4G is a 60V N-Channel Trench MOSFET transistors which is used in many of today\'s electronic devices. It is a single MOSFET transistor with a maximum drain current of 2 Amps. This MOSFET transistor can be used in a variety of applications, but one of its main uses is in motor control and high-current switching because of its ability to handle large amounts of current.
The NTD60N02RT4G is designed to provide a low on-state resistance, allowing it to work effectively even when it is carrying heavy current. It has an industry-standard TO-220AC package that is easy to mount on a circuit board. With its low gate-to-source threshold voltage, it is well suited for use in motor control and other switching applications where fast switching speeds are required.
The NTD60N02RT4G transistor works by using the gate to control the current flow through the drain and source. When the gate is triggered, the drain voltage is lowered, allowing current to flow through the transistor. Conversely, when the gate is not triggered, the drain voltage is increased, prohibiting current from flowing. The NTD60N02RT4G is a unipolar type of transistor, meaning that it is specified to operate with one type of charge carrier, either electrons (N-type) or holes (P-type).
The NTD60N02RT4G transistor is an N-channel MOSFET, meaning that it uses electrons as its charge carrier. The N-channel has two terminals, the drain and source, which are connected to the transistor through an insulated gate. When the gate voltage is triggered, a channel is formed between the source and drain, allowing current to flow. The N-channel is an efficient way to control the current flow in high-power applications because it has a low on-state resistance and a high switching speed.
The NTD60N02RT4G is suitable to be used in DC/DC converters, power amplifiers and switching circuits. Due to its low on-state resistance, it can be used in low-power switching applications such as relays, motors and solenoids. In addition, the transistor can also be used in high-power applications such as inverters, high-power drivers and DC-DC converters.
In conclusion, the NTD60N02RT4G transistor is a versatile and reliable choice for various applications. Its ability to handle large amounts of current, low on-state resistance and fast switching speed make it an ideal solution for a variety of motor control, switching and power amplification applications. The NTD60N02RT4G is an N-channel MOSFET transistor, meaning that it uses electrons as its charge carrier. With its industry-standard TO-220AC package, it is easy to mount on a circuit board and can be used in a variety of applications. With its superior performance, the NTD60N02RT4G is an excellent choice for powering and controlling applications that require high current.
The specific data is subject to PDF, and the above content is for reference
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