NTMFD4952NFT1G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTMFD4952NFT1G is a high-voltage metal–oxide–semiconductor field-effect transistor (MOSFET). This type of transistors is widely used for energy and power management in applications such as switching power supplies, motor control, and other power management applications. The NTMFD4952NFT1G has a source voltage which makes it suitable for high voltage switching applications up to 49.2V. Compared to BJTs, MOSFETs can provide higher current density, switching speed and is quicker to respond to changes in the gate bias. Furthermore, it offers low gate charge, low on-state resistance (Rds) and an industry leading threshold voltage.The working principle of the NTMFD4952NFT1G is based on the transfer of charges between the gate and the channel. The gate voltage is either negative or positive depending on the direction of current flow through the transistor. When the gate is negative, it attracts the positive charges from the channel; this increases the width of the depletion region in which the electrons are blocked from passing through and thus reduces the current flowing through and thus blocking current. When the gate is positive, it repels the negative charges from the channel; this reduces the width of the depletion region and allows electrons to move through.In practical applications, the NTMFD4952NFT1G is most commonly used for electronic switching and power control purposes. It is often used as an electronic switch in consumer electronics, automotive electronics and industrial control circuits to regulate and switch power. In consumer electronics, such as televisions and VCRs, they are used as an efficient means of power switch control. In automotive electronics, they are used in power window systems and other power control systems. In industrial control circuits, they are used as a high-current-carrying switch to control motors, pumps and other large loads.The NTMFD4952NFT1G can also be used for signal conditioning purposes such as in the design of power amplifiers, audio amplifiers and other signal conditioning circuits. In such applications, it is usually combined with other MOSFET transistors for the purpose of providing clean signal processing.In summary, the NTMFD4952NFT1G is a high-voltage MOSFET which is suitable for use in a wide range of applications including power management, switching, signal conditioning and power control. It offers low gate charge, low on-state resistance (Rds) and an industry leading threshold voltage and is therefore an ideal choice for high-voltage MOSFETs designs. Additionally, it is typically used to switch or regulate electrical current or voltage in order to control the operations of a system.

The specific data is subject to PDF, and the above content is for reference