Allicdata Part #: | NTMFD4C86NT3G-ND |
Manufacturer Part#: |
NTMFD4C86NT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 8DFN |
More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 1... |
DataSheet: | NTMFD4C86NT3G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 11.3A, 18.1A |
Rds On (Max) @ Id, Vgs: | 5.4 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 22.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1153pF @ 15V |
Power - Max: | 1.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-DFN (5x6) |
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The NTMFD4C86NT3G is a multi-channel enhancement-mode vertical DMOS FET, which belongs to the class of power field effect transistors. It belongs to the category of transistors – FETs, MOSFETs – Arrays, and it is designed for power management and regulation applications. This transistor has a 150 V breakdown voltage with 8.3 W on-state drain current and 25 V gate-to-source voltage.
The NTMFD4C86NT3G is widely used in the telecommunication and automotive industries, as well as in power tools and other power conversion applications such as high-current level shifters and gate drivers. It is especially suitable for reversing P-channel MOSFET gate drives in applications such as DC/DC converters.
The NTMFD4C86NT3G has a number of features that make it an ideal choice for power management and regulation applications. It has a low on-state resistance of RDS (on): 15 mOhm, making it suitable for low power dissipation. It also has a maximum drain current of 8.3A, making it suitable for high-current switch applications. Furthermore, it has excellent thermal and electrical performance, making it suitable for applications such as MOSFET level shifters and high current power tools.
The working principle of NTMFD4C86NT3G is based on a vertical DMOS fabrication technology called “Noise Parity”. This type of fabrication is used to assure low addition of noise to devices operating in high efficiency. This technology enables devices to be built with an improved breakdown voltage of 150V and 25V gate-to-source voltage. The vertical DMOS construction also offers devices with low on-state resistance and high-current capability.
The NTMFD4C86NT3G is a powerful device for power management and regulation applications. Its 150 V breakdown voltage and 8.3 W on-state drain current make it suitable for high-current switch applications, while its low-on state resistance, high-current capability and excellent thermal and electrical performance make it suitable for applications such as MOSFET level shifters and high current power tools.
The specific data is subject to PDF, and the above content is for reference
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