Allicdata Part #: | NTMFS4701NT3G-ND |
Manufacturer Part#: |
NTMFS4701NT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 7.7A SO8FL |
More Detail: | N-Channel 30V 7.7A (Ta) 900mW (Ta) Surface Mount 5... |
DataSheet: | NTMFS4701NT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 900mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1280pF @ 24V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.7A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTMFS4701NT3G is a high-power, N-channel MOSFET transistor (Metal-Oxide-Semiconductor Field-Effect Transistor). This type of device is a three-terminal switch commonly used in applications that require high-current switching capability. It is also used in applications that require high-power handling capability. This device can handle operating voltages up to 20V and has a maximum drain current of 3A.
NTMFS4701NT3G is a type of MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. It is a type of transistor that makes use of an insulated gate to control its flow of electric current. The gate is what determines the amount of current that is allowed to pass through the device. It is an "on-off" switch, meaning it can be used to provide a form of electrical isolation.
The NTMFS4701NT3G has a main gate, the Gate; a source, the Source; and a drain, the Drain. These three terminals allow electric current to pass through the device. There are also two additional contacts that are used to control the Gate bias and the Source bias. By controlling the biasing of these contacts, the device can be operated in either an on mode or an off mode.
The working principle of the NTMFS4701NT3G is based on the concept of charge carriers. The charge carriers, or electrons, are attracted to and pass through metal oxide semiconductor (MOS) material when voltage is applied. This creates a channel of electric current between the gate and the source and can be used to switch the device from an on mode to an off mode. The amount of current passing through the device is determined by the amount of voltage applied to the gate and source.
The NTMFS4701NT3G has a wide range of application fields. It can be used in DC motor control, HVAC, industrial, automotive, electrical and electronics industries. It has high switching speed and high efficiency, making it ideal for power conversion. It is also suitable for use in high-side switching applications. In addition, it is also used in LED lighting applications and RF power amplifiers.
The NTMFS4701NT3G is a reliable and cost-effective device which offer excellent performance and high-power handling capability. It is ideal for applications that require high current switching, high-power handling and high-speed switching. The device can be utilized to control electric currents that are larger than 3 Amperes.
The specific data is subject to PDF, and the above content is for reference
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