NTMFS5C628NLT3G

Vgs(th) (Max) @ Id:	2V @ 135µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.7W (Ta), 110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3600pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	52nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	2.4 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	--
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The NTMFS5C628NLT3G is an enhancement-mode metal-oxide semiconductor field-effect transistor (MOSFET) manufactured by ON Semiconductor. It has been designed for power management applications and is capable of switching 600V - 2A. The device also comes with built-in protection features such as over-temperature protection and over-voltage protection.This advanced MOSFET is suitable for use in a variety of applications due to its ability to handle higher power levels and temperatures than traditional MOSFETs. It is commonly used in power management applications, including motor control, power converters, and high-efficiency power supplies.To understand the NTMFS5C628NLT3G, it is important to understand the basic principles of MOSFET technology. MOSFETs are transistors that are composed of a thin gate oxide sandwiched between two metal electrodes. When a voltage is applied across the gate, it causes an electric field that changes the conductivity of the channel beneath it. The electric field is controlled by changing the amount of charge on the gate, which can be done either by applying a voltage or by using the gate current.The NTMFS5C628NLT3G has a low maximum on-state resistance (RDS(ON)) and a low gate-threshold voltage (Vgs(th)). This means that the device does not require a large gate voltage to turn on and can still provide high switching speed and low power consumption. Additionally, the device features an advanced gate oxide that supports high-voltage operation and reduces the gate charge.In addition to its power management capabilities, the NTMFS5C628NLT3G offers a variety of protection features. It has an internal over-voltage protection feature to prevent damage to the device in the event of a voltage surge. It also has over-temperature protection that can shut down the device in the event of a temperature spike.Finally, the NTMFS5C628NLT3G has the flexibility to meet the needs of various applications. It comes in a single SO-8 package and is compatible with modern manufacturing processes. It is also RoHS-2 compliant, making it suitable for use in environmentally friendly applications.In conclusion, the NTMFS5C628NLT3G is an advanced MOSFET designed for a wide range of power management applications. Its low RDS(ON) and gate-threshold voltage, combined with its built-in protection features, make it the perfect choice for power converters, motor control circuits, and high-efficiency power supplies. Its single SO-8 package and RoHS-2 compliance offer the added benefit of being able to meet the needs of modern manufacturing processes.

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