Allicdata Part #: | NTMFS4823NT1GOSTR-ND |
Manufacturer Part#: |
NTMFS4823NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 6.9A SO-8FL |
More Detail: | N-Channel 30V 6.9A (Ta), 30A (Tc) 860mW (Ta), 32.5... |
DataSheet: | NTMFS4823NT1G Datasheet/PDF |
Quantity: | 1500 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 860mW (Ta), 32.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 795pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 11.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10.6 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
Current - Continuous Drain (Id) @ 25°C: | 6.9A (Ta), 30A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTMFS4823NT1G MOSFET is a single, N-channel MOSFET. The device has a very low on-state resistance, making it suitable for use in power management circuits, such as DC-to-DC converters, switching power supplies, and other applications requiring high efficiency. This device is also suitable for circuits requiring high-side switching with low saturation voltage.
The NTMFS4823NT1G MOSFET is designed to operate over an extended temperature range. It is constructed with a high-quality silicon die, a metal gate, and a metal source. This advanced combination of components improves the thermal performance and reliability of the device. The device has a rating of 55V and a rated current of 1A.
The NTMFS4823NT1G MOSFET operates according to the design principles of metal-oxide-semiconductor (MOS) transistor technology, which uses metal electrodes, insulating layers of oxide, and silicon layers to form a transistor. The metal gate acts as a conductor between the source and drain, and the oxide layer provides electrical insulation and protection from interference. The MOSFET is therefore capable of controlling voltage directly, without the need for external components.
The NTMFS4823NT1G MOSFET has several applications. It can be used in high-efficiency switching power supplies and DC-to-DC converters, and can handle high-side switching with low saturation voltage. It can also be used in power management circuits, where its low on-state resistance is desirable. It can also be used in the control of battery packs and in other applications where switching is needed.
In addition to its usage as a high-efficiency power management device, the NTMFS4823NT1G MOSFET also has applications in audio circuits. The device’s low on-state resistance makes it suitable for use in audio circuits, particularly in the amplification stage. Its low voltage capability also makes it ideal for use in preamplifiers and other low-voltage applications.
The NTMFS4823NT1G MOSFET is a high-efficiency, low voltage single N-channel MOSFET. It is capable of controlling voltage directly and is suitable for use in a variety of power management and audio applications. Its extended temperature range makes it an excellent choice for use in automotive and other industrial applications. With its combination of features, it is an ideal device for switching and voltage control in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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