NTMFS4923NET1G Allicdata Electronics

NTMFS4923NET1G Discrete Semiconductor Products

Allicdata Part #:

NTMFS4923NET1GOSTR-ND

Manufacturer Part#:

NTMFS4923NET1G

Price: $ 0.64
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 91A SO-8FL
More Detail: N-Channel 30V 12.7A (Ta), 91A (Tc) 930mW (Ta), 48W...
DataSheet: NTMFS4923NET1G datasheetNTMFS4923NET1G Datasheet/PDF
Quantity: 1500
1 +: $ 0.64000
10 +: $ 0.62080
100 +: $ 0.60800
1000 +: $ 0.59520
10000 +: $ 0.57600
Stock 1500Can Ship Immediately
$ 0.64
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 930mW (Ta), 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 91A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTMFS4943NET1G is a part of the N-channel enhancement mode vertical double diffused metal-oxide-semiconductor field-effect transistor (MOSFET) family of devices developed by industries. They are manufactured to offer excellent performance in terms of power handling, switching delay time, output voltage range, as well as low on-resistance RDS(ON). With various advances in technology and an ever-increasing demand for switching efficiency and performance, the NTMFS4943NET1G has become a popular device for use in automotive, industrial, and other electronic components and products.

The NTMFS4943NET1G is a single MOSFET, which has the most basic structure of a MOSFET device. It consists of three terminals - the gate, drain, and source. All three are connected to a single piece of semiconductor material in a manner similar to the traditional bipolar transistor. The gate terminal is usually connected to a bias control voltage such as a DC voltage or AC voltage. The voltage applied to the gate terminal determines the amount of current that can flow between the drain and the source when the MOSFET is “on”.

The NTMFS4943NET1G is designed to operate between 20 V and 55 V, which falls within the range of most automotive, industrial, and consumer applications. The device has a rated drain source voltage of up to 55 V, a low on-resistance of 1.3 ohm, and a fast turn-on time of only 5 nanoseconds (ns). These features can help systems work at higher efficiency with lower voltage drop and less power wastage, which translates to lower system costs.

The most common application for the NTMFS4943NET1G is in automotive applications, where it is usually used as an electronic switch. These switches can be used to control the current flow in a variety of systems, such as power steering, fuel injections, and engine control systems. The NTMFS4943NET1G also finds use in consumer electronic devices such as modems, computers, and personal digital assistants.

The NTMFS4943NET1G is also a very efficient device for power conversion applications. Its low on-resistance and fast turn-on time allows it to be used in high frequency switching circuits, which can help reduce the size and complexity of a power conversion circuit. With its fast turn-on time, the NTMFS4943NET1G can help increase the efficiency of voltage regulation and current control systems, which is especially important for products that are subjected to strict power demands, such as those from automobiles.

The NTMFS4943NET1G is an efficient and reliable MOSFET for many applications requiring switching and power conversion. Its fast turn-on time, low on-resistance, and high drain source voltage makes it ideal for use in automotive, industrial, and consumer applications that require switching, voltage regulation, and current control. It is a versatile device that, when properly used, can help systems and products to be more efficient and reliable.

The specific data is subject to PDF, and the above content is for reference

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